MDS35-800 STMicroelectronics, MDS35-800 Datasheet

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MDS35-800

Manufacturer Part Number
MDS35-800
Description
DIODE / SCR MODULE
Manufacturer
STMicroelectronics
Datasheet
MAIN FEATURES:
DESCRIPTION
Packaged in ISOTOP modules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits,
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Thanks to their internal
ceramic pad, they provide high voltage insulation
(2500V RMS), complying with UL standards (File
ref: E81734).
PIN CONNECTIONS
ABSOLUTE RATINGS (limiting values)
ISOTOP is a registred trademark of STMicroelectronics
December 2000 - Ed: 4
Symbol
I
P
T(RMS)
V
I
V
I
I
dI/dt
G(AV)
T(AV)
I
T
TSM
FSM
RGM
GM
I
T
DRM
stg
Symbol
²
I
t
j
T(RMS)
I
GT
/V
welding
RRM
RMS on-state current
Average on-state current
(Single phase-circuit, 180° conduction angle per device)
Non repetitive surge peak on-state
current (Tj initial = 25°C)
I
Critical rate of rise of on-state current
I
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse SCR gate voltage
²
G
t Value for fusing
= 2 x I
equipment,
GT
800 and 1200
50 and 100
, tr
50-70-85
Value
100 ns
motor
Parameter
Unit
mA
speed
A
V
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
MDS35 / 50 / 80 Series
DIODE / SCR MODULE
Tj = 125°C
Tj = 125°C
Tj = 125°C
Tc = 85°C
Tj = 25°C
Tj = 25°C
ISOTOP®
420
400
800 1800 2450
35
50
25
- 40 to + 150
- 40 to + 125
Value
630
600
50
70
35
50
4
5
1
730
700
80
85
55
A/µs
Unit
A
°C
W
A
A
A
A
V
2
S
1/7

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MDS35-800 Summary of contents

Page 1

... P Average gate power dissipation G(AV) T Storage junction temperature range stg T Operating junction temperature range j V Maximum peak reverse SCR gate voltage RGM ISOTOP is a registred trademark of STMicroelectronics December 2000 - Ed: 4 MDS35 / Series Unit motor speed Parameter 100 µs DIODE / SCR MODULE ISOTOP® ...

Page 2

... MDS35 / Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SCR Symbol 3 DRM 500 mA Gate open 1 67% V dV/dt D DRM 380 µ 110 380 µ 170 380 µ Threshold voltage t0 R Dynamic resistance d I DRM RATED DRM RRM I RRM DIODE Symbol 110 170 A ...

Page 3

... MDS50-xxx MDS80-xxx MDS80-xxx Note: xxx = voltage Parameter Voltage (xxx) 1200 CURRENT: 35: 50A 50: 70A 80: 85A Weight 27.0 g 27.0 g 27.0 g MDS35 / Series Value MDS35 1.00 MDS50 0.75 MDS80 0.45 Sensitivity Package ISOTOP 150 mA VOLTAGE: 800: 800V 1200: 1200V Base Quantity Packing mode 10 Tube ...

Page 4

... MDS35 / Series Fig. 1-1: Maximum average power dissipation versus average on-state current (thyristor or diode, sinusoïdal waveform). Fig. 1-3: Maximum total power dissipation versus output current on resistive or inductive load (Single phase bridge rectifier, two packages). Fig. 2-1: Average on-state current versus case ...

Page 5

... Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 5-1: Surge peak on-state current versus number of cycles (MDS35 and MDS50). Fig. 6-1: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t (MDS35 and MDS50) ...

Page 6

... MDS35 / Series Fig. 7-1: On-state characteristics (thyristor or diode, maximum values) (MDS35). Fig. 7-3: On-state characteristics (thyristor or diode, maximum values) (MDS80). 6/7 Fig. 7-2: On-state characteristics (thyristor or diode, maximum values) (MDS50). ...

Page 7

... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom REF STMicroelectronics GROUP OF COMPANIES http://www.st.com MDS35 / Series DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 ...

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