MDS80-1200 STMicroelectronics, MDS80-1200 Datasheet

no-image

MDS80-1200

Manufacturer Part Number
MDS80-1200
Description
DIODE / SCR MODULE
Manufacturer
STMicroelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MDS80-1200
Manufacturer:
ST
Quantity:
292
Price:
MAIN FEATURES:
DESCRIPTION
Packaged in ISOTOP modules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits,
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Thanks to their internal
ceramic pad, they provide high voltage insulation
(2500V RMS), complying with UL standards (File
ref: E81734).
PIN CONNECTIONS
ABSOLUTE RATINGS (limiting values)
ISOTOP is a registred trademark of STMicroelectronics
December 2000 - Ed: 4
Symbol
I
P
T(RMS)
V
I
V
I
I
dI/dt
G(AV)
T(AV)
I
T
TSM
FSM
RGM
GM
I
T
DRM
stg
Symbol
²
I
t
j
T(RMS)
I
GT
/V
welding
RRM
RMS on-state current
Average on-state current
(Single phase-circuit, 180° conduction angle per device)
Non repetitive surge peak on-state
current (Tj initial = 25°C)
I
Critical rate of rise of on-state current
I
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse SCR gate voltage
²
G
t Value for fusing
= 2 x I
equipment,
GT
800 and 1200
50 and 100
, tr
50-70-85
Value
100 ns
motor
Parameter
Unit
mA
speed
A
V
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
MDS35 / 50 / 80 Series
DIODE / SCR MODULE
Tj = 125°C
Tj = 125°C
Tj = 125°C
Tc = 85°C
Tj = 25°C
Tj = 25°C
ISOTOP®
420
400
800 1800 2450
35
50
25
- 40 to + 150
- 40 to + 125
Value
630
600
50
70
35
50
4
5
1
730
700
80
85
55
A/µs
Unit
A
°C
W
A
A
A
A
V
2
S
1/7

Related parts for MDS80-1200

MDS80-1200 Summary of contents

Page 1

... Peak gate current GM P Average gate power dissipation G(AV) T Storage junction temperature range stg T Operating junction temperature range j V Maximum peak reverse SCR gate voltage RGM ISOTOP is a registred trademark of STMicroelectronics December 2000 - Ed: 4 MDS35 / Series Unit motor speed Parameter 100 µ ...

Page 2

MDS35 / Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SCR Symbol 3 DRM ...

Page 3

... Note: xxx = voltage Parameter Voltage (xxx) 1200 CURRENT: 35: 50A 50: 70A 80: 85A Weight 27.0 g 27.0 g 27.0 g MDS35 / Series Value MDS35 1.00 MDS50 0.75 MDS80 0.45 Sensitivity Package ISOTOP 150 mA VOLTAGE: 800: 800V 1200: 1200V Base Quantity Packing mode 10 Tube 10 Tube 10 Tube Unit °C/W TM 3/7 ...

Page 4

MDS35 / Series Fig. 1-1: Maximum average power dissipation versus average on-state current (thyristor or diode, sinusoïdal waveform). Fig. 1-3: Maximum total power dissipation versus output current on resistive or inductive load (Single phase bridge rectifier, two ...

Page 5

... Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5-2: Surge peak on-state current versus number of cycles (MDS80). Fig. 6-2: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t (MDS80) ...

Page 6

... MDS35 / Series Fig. 7-1: On-state characteristics (thyristor or diode, maximum values) (MDS35). Fig. 7-3: On-state characteristics (thyristor or diode, maximum values) (MDS80). 6/7 Fig. 7-2: On-state characteristics (thyristor or diode, maximum values) (MDS50). ...

Page 7

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © ...

Related keywords