E53NA50 STMicroelectronics, E53NA50 Datasheet

no-image

E53NA50

Manufacturer Part Number
E53NA50
Description
Search ---> STE53NA50
Manufacturer
STMicroelectronics
Datasheet
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
February 1998
ST E53NA50
Symbol
TYPICAL R
HIGH CURRENT POWER MODULE
AVALANCHE RUGGED TECHNOLOGY
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
EASY TO MOUNT
SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
EXTREMELY LOW Rth (Junction to case)
VERY LOW INTERNAL PARASITIC
INDUCTANCE
ISOLATED PACKAGE UL RECOGNIZED
SMPS & UPS
MOTOR CONTROL
WELDING EQUIPMENT
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
I
V
DM
V
V
V
T
P
DGR
I
I
T
ISO
DS
GS
st g
D
D
to t
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction T emperature
Insulation W ithhstand Voltage (AC-RMS)
DS(on)
500 V
V
= 0.075
DSS
< 0.085
Parameter
R
DS(on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
FAST POWER MOS TRANSISTOR
53 A
= 25
= 100
I
D
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
-55 to 150
Value
2500
3.68
500
500
212
460
150
ISOTOP
53
33
30
STE53NA50
W/
Unit
o
o
W
V
V
V
A
A
A
V
C
C
o
C
1/7

Related parts for E53NA50

E53NA50 Summary of contents

Page 1

... N - CHANNEL ENHANCEMENT MODE TYPE V R DSS DS(on) ST E53NA50 500 V < 0.085 TYPICAL R = 0.075 DS(on) HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) ...

Page 2

... STE53NA50 THERMAL DATA R Thermal Resistance Junction-case t hj- Thermal Resistance Case-heatsink W ith Conductive thc -h Grease Applied AVALANCHE CHARACTERISTICS Symb ol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symb ol Parameter V Drain-source (BR)DSS Breakdown Voltage ...

Page 3

... D GS Test Cond ition 400 4 (see test circuit, figure 3) Test Cond ition di/dt = 100 100 150 (see test circuit, figure 3) Thermal Impedance STE53NA50 Min. Typ . Max 130 ns 470 658 219 nC Min. Typ . Max 105 145 145 205 ns Min. Typ . Max 212 A 1 ...

Page 4

... STE53NA50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/7 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Fig. 2: Gate Charge test Circuit STE53NA50 Normalized On Resistance vs Temperature Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times 5/7 ...

Page 6

... STE53NA50 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. A 11.8 B 8.9 C 1.95 D 0.75 E 12.6 F 25. 4.1 K 14.9 L 30 6/7 inch MAX. MIN. TYP. 12.2 0.466 9.1 0.350 2.05 0.076 0.85 0.029 12.8 0.496 25.5 0.990 31.7 1.240 0.157 4.3 0.161 15.1 ...

Page 7

... SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S STE53NA50 7/7 ...

Related keywords