1SMB12CAT3G ON Semiconductor, 1SMB12CAT3G Datasheet - Page 2

• Manufacturer Part Number: 1SMB12CAT3G
• Description: TVS 600W 12V BIDIRECT SMB
• Manufacturer: ON Semiconductor

Specifications of 1SMB12CAT3G

• Voltage - Reverse Standoff (typ): 12V
• Voltage - Breakdown: 13.3V
• Power (watts): 600W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Polarity: Bidirectional
• Clamping Voltage: 19.9 V
• Operating Voltage: 12 V
• Breakdown Voltage: 14 V
• Termination Style: SMD/SMT
• Peak Surge Current: 30.2 A
• Peak Pulse Power Dissipation: 600 W
• Capacitance: 680 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 3.81(Max) mm W x 4.57(Max) mm L
• Number Of Elements: 1
• Package Type: SMB
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 13.3V
• Reverse Stand-off Voltage: 12V
• Leakage Current (max): 5uA
• Peak Pulse Current: 30.2A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Reverse Stand-off Voltage Vrwm: 12V
• Clamping Voltage Vc Max: 19.9V
• Diode Configuration: Bidirectional
• Diode Case Style: 403C
• No. Of Pins: 2
• Power Dissipation Pd: 550mW
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Breakdown Voltage Vbr: 14V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1SMB12CAT3GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(T
Peak Power Dissipation (Note 1)
DC Power Dissipation @ T
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
Thermal Resistance from Junction−to−Ambient
Operating and Storage
Symbol
A
V
@ T
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Derate Above 25°C
Temperature Range
V
= 25°C unless otherwise noted)
I
RWM
V
I
PP
I
BR
R
T
C
L
= 25°C, Pulse Width = 1 ms
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
L
= 75°C
Parameter
PP
A
T
= 25°C
Rating
RWM
http://onsemi.com
2
V
C
V
BR
Bi−Directional TVS
Symbol
T
V
R
R
J
P
RWM
P
P
, T
qJL
qJA
PK
D
D
stg
I
PP
I
I
R
T
I
I
I
I
PP
R
T
−65 to +150
V
RWM
Value
0.55
600
226
3.0
4.4
40
25
V
BR
V
C
V
mW/°C
mW/°C
°C/W
°C/W
Unit
°C
W
W
W