1SMB12CAT3G ON Semiconductor, 1SMB12CAT3G Datasheet - Page 3

• Manufacturer Part Number: 1SMB12CAT3G
• Description: TVS 600W 12V BIDIRECT SMB
• Manufacturer: ON Semiconductor

Specifications of 1SMB12CAT3G

• Voltage - Reverse Standoff (typ): 12V
• Voltage - Breakdown: 13.3V
• Power (watts): 600W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Polarity: Bidirectional
• Clamping Voltage: 19.9 V
• Operating Voltage: 12 V
• Breakdown Voltage: 14 V
• Termination Style: SMD/SMT
• Peak Surge Current: 30.2 A
• Peak Pulse Power Dissipation: 600 W
• Capacitance: 680 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 3.81(Max) mm W x 4.57(Max) mm L
• Number Of Elements: 1
• Package Type: SMB
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 13.3V
• Reverse Stand-off Voltage: 12V
• Leakage Current (max): 5uA
• Peak Pulse Current: 30.2A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Reverse Stand-off Voltage Vrwm: 12V
• Clamping Voltage Vc Max: 19.9V
• Diode Configuration: Bidirectional
• Diode Case Style: 403C
• No. Of Pins: 2
• Power Dissipation Pd: 550mW
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Breakdown Voltage Vbr: 14V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1SMB12CAT3GOSTR

4. A transient suppressor is normally selected according to the working peak reverse voltage (V
5. V
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, T
*The “G” suffix indicates Pb−Free package available.
ELECTRICAL CHARACTERISTICS
1SMB10CAT3, G
1SMB11CAT3, G
1SMB12CAT3, G
1SMB13CAT3, G
1SMB14CAT3, G
1SMB15CAT3, G
1SMB16CAT3, G
1SMB17CAT3, G
1SMB18CAT3, G
1SMB20CAT3, G
1SMB22CAT3, G
1SMB24CAT3, G
1SMB26CAT3, G
1SMB28CAT3, G
1SMB30CAT3, G
1SMB33CAT3, G
1SMB36CAT3, G
1SMB40CAT3, G
1SMB43CAT3, G
1SMB45CAT3, G
1SMB48CAT3, G
1SMB51CAT3, G
1SMB54CAT3, G
1SMB58CAT3, G
1SMB60CAT3, G
1SMB64CAT3, G
1SMB75CAT3, G
the DC or continuous peak operating voltage level.
BR
Device*
measured at pulse test current I
Marking
Device
MGC
MMC
LMC
MEC
MKC
MPC
MRC
MTC
MVC
MXC
MZC
NGC
NMC
NRC
KXC
LGC
NEC
NKC
KZC
LEC
LKC
LPC
LRC
LXC
LZC
LTC
LVC
J
= 25°C
(Note 4)
T
V
Volts
at an ambient temperature of 25°C.
RWM
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
75
I
R
@ V
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
mA
http://onsemi.com
RWM
3
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
83.3
11.1
Min
V
BR
Breakdown Voltage
(Note 5) Volts
11.69
12.84
14.00
15.16
16.42
17.58
18.74
19.90
21.06
23.37
25.69
28.11
30.42
32.74
35.06
38.63
42.11
46.74
50.32
52.63
56.11
59.69
63.16
67.79
70.21
74.84
91.65
Nom
12.27
66.32
71.18
73.72
78.58
92.07
Max
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
27.0
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
RWM
), which should be equal to or greater than
@ I
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
T
V
Volts
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.2
77.4
82.4
87.1
93.6
96.8
C
103
121
V
@ I
C
PP
(Note 6)
Amps
35.3
33.0
30.2
27.9
25.8
24.0
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
10.3
11.3
I
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
4.9
PP
(Note 7)
C
805
740
680
630
590
555
520
490
465
425
390
366
330
310
290
265
245
220
210
200
190
175
170
155
150
145
125
pF
typ