PIC16F917-I/ML Microchip Technology, PIC16F917-I/ML Datasheet - Page 193

IC PIC MCU FLASH 8KX14 44QFN

PIC16F917-I/ML

Manufacturer Part Number
PIC16F917-I/ML
Description
IC PIC MCU FLASH 8KX14 44QFN
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F917-I/ML

Core Size
8-Bit
Program Memory Size
14KB (8K x 14)
Core Processor
PIC
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LCD, POR, PWM, WDT
Number Of I /o
35
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
352 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFN
Controller Family/series
PIC16F
No. Of I/o's
35
Eeprom Memory Size
256Byte
Ram Memory Size
352Byte
Cpu Speed
20MHz
No. Of Timers
3
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
352 B
Interface Type
SSP, I2C, AUSART, SPI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
35
Number Of Timers
2
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DV164120, DM163029
Minimum Operating Temperature
- 40 C
On-chip Adc
8
Data Rom Size
256 B
Height
0.88 mm
Length
8 mm
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Width
8 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT44QFN2 - SOCKET TRAN ICE 44QFN/40DIPAC164322 - MODULE SOCKET MPLAB PM3 28/44QFN444-1001 - DEMO BOARD FOR PICMICRO MCU
Lead Free Status / Rohs Status
 Details
13.1.4
To read a program memory location, the user must
write two bytes of the address to the EEADRL and
EEADRH registers, set the EEPGD control bit, and
then set control bit RD of the EECON1 register. Once
the read control bit is set, the program memory Flash
controller will use the second instruction cycle to read
the data. This causes the second instruction immedi-
ately following the “BSF EECON1,RD” instruction to be
ignored. The data is available in the very next cycle, in
the EEDATL and EEDATH registers; therefore, it can
be read as two bytes in the following instructions.
EEDATL and EEDATH registers will hold this value until
another read or until it is written to by the user (during
a write operation).
EXAMPLE 13-3:
© 2007 Microchip Technology Inc.
Note 1: The two instructions following a program
;
;
2: If the WR bit is set when EEPGD = 1, the
READING THE FLASH PROGRAM
MEMORY
BANKSEL EEADRL
MOVLW
MOVWF
MOVLW
MOVWF
BANKSEL EECON1
BSF
BSF
NOP
NOP
BANKSEL EEDATL
MOVF
MOVWF
MOVF
MOVWF
memory read are required to be NOP’s.
This prevents the user from executing a
two-cycle
instruction after the RD bit is set.
WR bit will be immediately reset to ‘0’ and
no operation will take place.
FLASH PROGRAM READ
MS_PROG_EE_ADDR;
EEADRH
LS_PROG_EE_ADDR;
EEADRL
EECON1, EEPGD
EECON1, RD
EEDATL, W
DATAL
EEDATH, W
DATAH
instruction
on
;
;MS Byte of Program Address to read
;LS Byte of Program Address to read
;
;Point to PROGRAM memory
;EE Read
;Any instructions here are ignored as program
;memory is read in second cycle after BSF
;
;W = LS Byte of EEPROM Data program
;
;W = MS Byte of EEPROM Data program
;
the
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DS41250F-page 191

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