PIC18F2525-I/SO Microchip Technology, PIC18F2525-I/SO Datasheet - Page 340

• Manufacturer Part Number: PIC18F2525-I/SO
• Description: IC MCU FLASH 24KX16 28SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F2525-I/SO

• Program Memory Type: FLASH
• Program Memory Size: 48KB (24K x 16)
• Package / Case: 28-SOIC (7.5mm Width)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 25
• Eeprom Size: 1K x 8
• Ram Size: 3.8K x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 3986 B
• Interface Type: SPI, I2C, EUSART
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 25
• Number Of Timers: 1 x 8
• Operating Supply Voltage: 4.2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DM163022, DV164136
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit
• Package: 28SOIC W
• Device Core: PIC
• Family Name: PIC18
• Maximum Speed: 40 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MILI3DB18F4620 - BOARD DAUGHTER ICEPIC3
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC18F2525/2620/4525/4620
TABLE 26-1:
DS39626B-page 338
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132B V
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
T
I
DDP
DDP
Sym
DEW
RETD
REF
IW
RETD
D
DRW
P
PR
PEW
only and are not tested.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
Self-timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
for Read/Write
for Read
for Self-timed Write
Characteristic
(1)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
10K
Min
1M
40
40
—
—
—
—
MIN
MIN
MIN
Typ†
100K
10M
100
1M
—
—
10
—
—
10
4
2
Max
5.5
5.5
5.5
—
—
—
—
—
—
—
—
—
-40°C
Units
Year Provided no other
Year Provided no other
E/W -40 C to +85 C
E/W -40°C to +85°C
E/W -40 C to +85 C
mA
mA
ms
ms
V
V
V
T
A
 2004 Microchip Technology Inc.
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
V
voltage
specifications are violated
MIN
MIN
MIN
+85°C for industrial
= Minimum operating
= Minimum operating
= Minimum operating
Conditions