MC908JL16CFJE Freescale Semiconductor, MC908JL16CFJE Datasheet - Page 34

• Manufacturer Part Number: MC908JL16CFJE
• Description: IC MCU 16K FLASH 8MHZ 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908JL16CFJE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: I²C, SCI
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 26
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 13x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Processor Series: HC08JL
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 26
• Number Of Timers: 4
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908JL16E, M68CBL05CE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 13-ch x 10-bit
• Controller Family/series: HC08
• No. Of I/o's: 26
• Ram Memory Size: 512Byte
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: I2C, SCI, SPI
• Rohs Compliant: Yes
• For Use With: DEMO908JL16E - BOARD DEMO FOR MC908JL16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Memory
2.5.2 FLASH Control Register
The FLASH control register (FCLR) controls FLASH program and erase operations.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
34
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
This read/write bit configures the memory for mass erase operation or page erase operation when the
ERASE bit is set.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
Address: $FE08
Reset:
Read:
Write:
Bit 7
0
0
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
MC68HC908JL16 Data Sheet, Rev. 1.1
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
Freescale Semiconductor
PGM
Bit 0
0