MC9S08LG16CLF Freescale Semiconductor, MC9S08LG16CLF Datasheet - Page 13

• Manufacturer Part Number: MC9S08LG16CLF
• Description: IC MCU 8BIT LG16 FLASH 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08LG16CLF

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LCD, LVD, PWM
• Number Of I /o: 39
• Program Memory Size: 18KB (18K x 8)
• Program Memory Type: FLASH
• Ram Size: 1.9K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 9x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Processor Series: S08LG
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1984 B
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 39
• Number Of Timers: 1
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08LG32
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 9-ch x 12-bit
• Controller Family/series: HCS08
• No. Of I/o's: 39
• Ram Memory Size: 2KB
• Cpu Speed: 40MHz
• Embedded Interface Type: I2C, SCI, SPI
• Digital Ic Case Style: LQFP
• Rohs Compliant: Yes
• For Use With: DEMO9S08LL16 - BOARD DEMO FOR MC9S08LL16 MCU
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2.6
This section includes information about power supply requirements and I/O pin characteristics.
Freescale Semiconductor
Num C
10
11
12
13
1
2
3
4
5
6
7
8
9
— Operating Voltage
C Output high current — Max total I
P Output high voltage — Low Drive (PTxDSn = 0)
P Output low voltage — Low Drive (PTxDSn = 0)
P Output high current — Max total I
P Bandgap voltage reference
P Input high voltage; all digital inputs
P Input low voltage; all digital inputs
P Input hysteresis; all digital inputs
P Input leakage current; input only pins
P High impedence (off-state) leakage current
P Internal pullup resistors
P Internal pulldown resistors
Output high voltage — High Drive (PTxDSn = 1) V
Output low voltage — High Drive (PTxDSn = 1)
DC Characteristics
1
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
No.
1
2
3
Human body model (HBM)
Charge device model (CDM)
Latch-up current at T
Table 7. ESD and Latch-Up Protection Characteristics
Characteristic
3
4
Rating
MC9S08LG32 Series Data Sheet, Rev. 7
OH
OL
1
A
Table 8. DC Characteristics
for all ports
for all ports
2
= 85 °C
3 V, I
5 V, I
3 V, I
5 V, I
3 V, I
5 V, I
V
V
5 V, I
3 V, I
In
In
Load
Load
Load
= V
= V
Load
Load
Load
Load
Load
= –0.6 mA
= –10 mA
DD
DD
Symbol
= 0.6 mA
= –2 mA
= –3 mA
= 10 mA
V
V
= 2 mA
= 3 mA
I
or V
or V
HBM
CDM
LAT
5 V
3 V
5 V
3 V
SS
SS
Symbol
I
V
V
V
|I
R
R
V
I
V
|I
OHT
V
OLT
—
OZ
OH
hys
OL
BG
In
PU
PD
IH
IL
2500
±100
|
Min
750
|
0.65 x V
0.06 x V
V
V
V
V
DD –
DD –
DD –
DD –
Min
2.7
20
20
—
—
—
—
—
—
—
0.8
0.8
0.8
0.8
Max
DD
DD
—
—
—
1.225
Electrical Characteristics
Typ
0.1
0.1
—
45
45
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Unit
mA
V
V
0.35 x V
Max
100
100
5.5
0.8
0.8
0.8
0.8
60
60
—
65
65
—
—
—
—
—
—
1
1
DD
Unit
mA
mA
mV
μA
μA
kΩ
kΩ
V
V
V
V
V
V
13