MC9S08DZ60ACLF Freescale Semiconductor, MC9S08DZ60ACLF Datasheet - Page 389
![IC MCU 60K FLASH 4K RAM 48-LQFP](/photos/12/18/121825/mc9s08dz60aclf_sml.jpg)
MC9S08DZ60ACLF
Manufacturer Part Number
MC9S08DZ60ACLF
Description
IC MCU 60K FLASH 4K RAM 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheets
1.DEMO9S08DZ60.pdf
(416 pages)
2.EVB9S08DZ60.pdf
(4 pages)
3.MC9S08DZ48AMLF.pdf
(458 pages)
Specifications of MC9S08DZ60ACLF
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
S08DZ
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
4 KB
Interface Type
CAN, I2C, SCI, SPI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
53
Number Of Timers
2
Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08DZ60
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 24 Channel
For Use With
DEMO9S08DZ60 - BOARD DEMOEVB9S08DZ60 - BOARD EVAL FOR 9S08DZ60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08DZ60ACLF
Manufacturer:
FREESCAL
Quantity:
1 250
Company:
Part Number:
MC9S08DZ60ACLF
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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A.13 Flash and EEPROM
This section provides details about program/erase times and program-erase endurance for the Flash and
EEPROM memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
Num
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for Flash and EEPROM is based on the intrinsic bit cell performance. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for
Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
10
11
1
2
3
4
5
6
7
8
9
—
—
—
—
—
—
—
—
C
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Flash Program/erase endurance
EEPROM Program/erase endurance
Data retention
0 < f
0 < f
T
T = 25°C
T
T
T = 25°C
L
L
L
to T
to T
to T
Bus
Bus
H
H
H
< 20 MHz
< 8 MHz
= –40°C to + 125°C
= –40°C to + 0°C
= 0°C to + 125°C
4
2
(2)
Rating
Table A-17. Flash and EEPROM Characteristics
1
MC9S08DZ60 Series Data Sheet, Rev. 4
(2)
3
3
(2)
V
Symbol
prog/erase
n
V
n
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
EEPE
Fcyc
FLPE
prog
Read
10,000
10,000
50,000
150
Min
2.7
2.7
15
—
—
5
Chapter 4,
100,000
100,000
Typical
20,000
4000
100
Appendix A Electrical Characteristics
—
—
—
9
4
“Memory.”
6.67
Max
200
5.5
5.5
—
—
—
—
—
—
DD
cycles
cycles
years
supply.
t
t
t
t
Unit
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
389
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