MC9S12GC64MFAE Freescale Semiconductor, MC9S12GC64MFAE Datasheet - Page 655

• Manufacturer Part Number: MC9S12GC64MFAE
• Description: IC MCU 64K FLASH 25MHZ 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12GC64MFAE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 31
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-LQFP
• Processor Series: S12GC
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 4 KB
• Interface Type: CAN/SCI/SPI
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 31
• Number Of Timers: 8
• Operating Supply Voltage: 3.3 V to 5.5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: M68EVB912C32EE, M68DKIT912C32SLK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
2. Refer to
3. Parameter only applies in STOP or Pseudo STOP mode.
A.1.10
This section describes the current consumption characteristics of the device as well as the conditions for
the measurements.
A.1.10.1
All measurements are without output loads. Unless otherwise noted the currents are measured in single
chip mode, internal voltage regulator enabled and at 25MHz bus frequency using a 4MHz oscillator.
Freescale Semiconductor
Conditions are V
Num C
10
11
12
11
12
13
14
8 C to 12 C in the temper ature range from 50 C to 125 C .
1
2
3
4
5
6
7
8
9
C Input Hysteresis
C
C
C Internal Pull Up Device Current, tested at V
C Internal Pull Down Device Current, tested at V
D Input Capacitance
P Input High Voltage
T Input High Voltage
P Input Low Voltage
T Input Low Voltage
P
P
P
P Internal Pull Up Device Current, tested at V
P Internal Pull Down Device Current, tested at V
T
P Port P, J Interrupt Input Pulse filtered
P Port P, J Interrupt Input Pulse passed
Section A.1.4, “Current
Input Leakage Current (pins in high ohmic input mode)
Output High Voltage (pins in output mode)
Output High Voltage (pins in output mode)
Output Low Voltage (pins in output mode)
Output Low Voltage (pins in output mode)
Injection current
V
Partial Drive I OH = –0.75mA
Full Drive I OH = –4mA
Partial Drive I OL = +0.9mA
Full Drive I OL = +4.75mA
Single Pin limit
Total Device Limit. Sum of all injected currents
Supply Currents
in
Measurement Conditions
= V
DDX
DD5
=3.3V +/-10%, Temperature from –40˚C to +140˚C, unless otherwise noted
or V
(2)
SS5
Injection”, for more details
Rating
Table A-7. 3.3V I/O Characteristics
MC9S12C-Family / MC9S12GC-Family
(3)
3
IL
IH
Max.
Min.
IH
IL
Rev 01.24
Max.
Min.
(1)
Symbol
V
t
t
I
I
V
V
I
I
V
V
PIGN
PVAL
I
I
V
V
PUH
PDH
V
V
PUL
PDL
C
HYS
ICS
ICP
I
OH
OH
in
OL
OL
IH
IH
IL
IL
in
V
V
V
0.65*V
SS5
DD5
DD5
–2.5
Min
–25
–1
10
—
—
—
—
—
—
—
—
—
-6
6
– 0.3
– 0.4
– 0.4
DD5
Appendix A Electrical Characteristics
Typ
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
V
0.35*V
DD5
Max
0.4
0.4
–60
2.5
60
25
—
—
—
—
—
—
—
—
—
3
1
+ 0.3
DD5
Unit
mV
πΦ
µΑ
µA
µA
µA
µA
µA
µs
µs
V
V
V
V
V
V
V
V
655