C8051F902-GM Silicon Laboratories Inc, C8051F902-GM Datasheet - Page 56
![IC MCU 8BIT 8KB FLASH 24QFN](/photos/12/15/121587/c8051f9xx_24-qfn_sml.jpg)
C8051F902-GM
Manufacturer Part Number
C8051F902-GM
Description
IC MCU 8BIT 8KB FLASH 24QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F9xxr
Specifications of C8051F902-GM
Program Memory Type
FLASH
Program Memory Size
8KB (8K x 8)
Package / Case
24-QFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
16
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
0.9 V ~ 3.6 V
Data Converters
A/D 15x10/12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F9x
Core
8051
Data Ram Size
768 B
Interface Type
UART
Maximum Clock Frequency
25 MHz
Number Of Timers
4
Operating Supply Voltage
0.9 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F912DK
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit
Package
24QFN EP
Device Core
8051
Family Name
C8051F90x
Maximum Speed
25 MHz
Data Bus Width
8 Bit
Number Of Programmable I/os
16
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1848-5
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- Download datasheet (3Mb)
C8051F91x-C8051F90x
Table 4.12. Voltage Reference Electrical Characteristics
V
56
Internal High Speed Reference (REFSL[1:0] = 11)
Output Voltage
VREF Turn-on Time
Supply Current
Internal Precision Reference (REFSL[1:0] = 00, REFOE = 1)
Output Voltage
VREF Short-Circuit Current
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
VREF Turn-on Time 3
Supply Current
External Reference (REFSL[1:0] = 00, REFOE = 0)
Input Voltage Range
Input Current
Note:
DD
= 1.8 to 3.6 V,
Blue
Parameter
indicates a feature only available on ‘F912 and ‘F902 devices.
–
40 to +85 °C unless otherwise specified.
no bypass cap, settling to 0.5 LSB
0.1 µF ceramic bypass, settling to
Sample Rate = 300 ksps; VREF =
4.7 µF tantalum, 0.1 µF ceramic
Load = 0 to 200 µA to AGND
bypass, settling to 0.5 LSB
Normal Power Mode
Low Power Mode
V
V
–40 to +85 °C,
–40 to +85 °C,
DD
DD
Conditions
0.5 LSB
= 1.8–3.6 V
= 1.8–3.6 V
3.0 V
Rev. 1.0
1.645
1.60
Min
—
—
—
—
—
—
—
—
—
—
0
1.680
1.65
5.25
Typ
260
140
400
300
10
15
25
15
—
—
1.715
Max
1.70
V
1.5
—
—
—
—
—
—
—
—
—
DD
µV/µA
Units
mA
ms
µA
µA
µA
µs
µs
µs
V
V
V
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