DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 255
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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2.2.68
TAS (Test And Set)
Operation
@ERd – 0
1
Assembly-Language Format
TAS @ERd
Operand Size
Byte
Description
This instruction tests a memory operand by comparing it with zero, and sets the condition-code
register according to the result. Then it sets the most significant bit (bit 7) of the operand to 1.
Available Registers
ERd: ER0, ER1, ER4, ER5
Operand Format and Number of States Required for Execution
Notes
Register indirect
Addressing
(<bit 7> of @ERd)
Mode
TAS
set/clear CCR
Mnemonic
TAS
Operands
@ERd
1st byte
0
1
Condition Code
H: Previous value remains unchanged.
N: Set to 1 if the result is negative; otherwise
Z: Set to 1 if the result is zero; otherwise
V: Always cleared to 0.
C: Previous value remains unchanged.
2nd byte
E
Instruction Format
cleared to 0.
cleared to 0.
Rev. 4.00 Feb 24, 2006 page 239 of 322
—
I
0
UI H
—
Section 2 Instruction Descriptions
—
3rd byte
7
—
U
B
N
0 erd
4th byte
REJ09B0139-0400
Z
C
Test and Set
V
0
—
States
No. of
C
4
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