M30625FGPGP#U9C Renesas Electronics America, M30625FGPGP#U9C Datasheet - Page 90
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M30625FGPGP#U9C
Manufacturer Part Number
M30625FGPGP#U9C
Description
IC M16C MCU FLASH 128LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/60r
Datasheets
1.QSK-62P_PLUS.pdf
(103 pages)
2.M30622SAFPU5.pdf
(308 pages)
3.M30620SPGPU3C.pdf
(423 pages)
Specifications of M30625FGPGP#U9C
Core Processor
M16C/60
Core Size
16-Bit
Speed
24MHz
Connectivity
I²C, IEBus, UART/USART
Peripherals
DMA, WDT
Number Of I /o
111
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
128-LQFP
For Use With
867-1000 - KIT QUICK START RENESAS 62PR0K33062PS001BE - R0K33062P STARTER KITR0K33062PS000BE - KIT EVAL STARTER FOR M16C/62PM3062PT3-CPE-3 - EMULATOR COMPACT M16C/62P/30P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
M16C/62P Group (M16C/62P, M16C/62PT)
Rev.2.41
REJ03B0001-0241
Table 5.58
NOTES:
I
Symbol
CC
1. Referenced to V
2. With one timer operated using fC32.
3. This indicates the memory in which the program to be executed exists.
specified. T version = − 40 to 85 ° C, V version = − 40 to 125 ° C.
Jan 10, 2006
Power Supply Current
(V
CC1
=V
Electrical Characteristics (2)
CC2
=4.0V to 5.5V)
CC1
=V
Parameter
Page 88 of 96
CC2
=4.0 to 5.5V, V
In single-chip
mode, the output
pins are open and
other pins are V
SS
= 0V at T
SS
(1)
Mask ROM
Flash
Memory
Flash Memory
Program
Flash Memory
Erase
Mask ROM
Flash Memory
Mask ROM
Flash Memory
opr
= − 40 to 85 ° C / − 40 to 125 ° C, f(BCLK)=24MHz unless otherwise
Measuring Condition
f(BCLK)=24MHz
No division, PLL operation
No division,
On-chip oscillation
f(BCLK)=24MHz,
No division, PLL operation
No division,
On-chip oscillation
f(BCLK)=10MHz,
V
f(BCLK)=10MHz,
V
f(XCIN)=32kHz
Low power dissipation
mode, ROM
f(BCLK)=32kHz
Low power dissipation
mode, RAM
f(BCLK)=32kHz
Low power dissipation
mode, Flash Memory
On-chip oscillation,
Wait mode
f(BCLK)=32kHz
Wait mode
Oscillation capability High
f(BCLK)=32kHz
Wait mode
Oscillation capability Low
Stop mode
Stop mode
Stop mode
Topr =25 ° C
Topr =85 ° C
Topr =125 ° C
CC1
CC1
=5.0V
=5.0V
(2)
(2)
(3)
(3)
,
,
(3)
5. Electrical Characteristics
Min.
Standard
Typ.
420
1.8
7.5
2.0
2.0
14
18
15
25
25
25
50
1
Max.
TBD
6.0
20
27
20
Unit
mA
mA
mA
mA
mA
mA
µ A
µ A
µ A
µ A
µ A
µ A
µ A
µ A
µ A