R5F64189DFD#U0 Renesas Electronics America, R5F64189DFD#U0 Datasheet - Page 88

MCU 1M+8K FLASH 144-LQFP

R5F64189DFD#U0

Manufacturer Part Number
R5F64189DFD#U0
Description
MCU 1M+8K FLASH 144-LQFP
Manufacturer
Renesas Electronics America
Series
M16C/R32C/100/118r
Datasheet

Specifications of R5F64189DFD#U0

Core Processor
R32C/100
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IEBus, UART/USART
Peripherals
DMA, LVD, PWM, WDT
Number Of I /o
120
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
63K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 34x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R5F64189DFD#U0R5F64189DFD
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
R5F64189DFD#U0
Manufacturer:
MXIC
Quantity:
3 400
Company:
Part Number:
R5F64189DFD#U0
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
R5F64189DFD#U0R5F64189DFD#UB
Manufacturer:
REA
Quantity:
15
Company:
Part Number:
R5F64189DFD#U0R5F64189DFD#UB
Manufacturer:
Renesas Electronics America
Quantity:
10 000
R32C/118 Group
REJ03B0255-0110
Jun 23, 2010
Table 5.7
Table 5.8
Notes:
V
Symbol
Symbol
RDR
1.
2.
3.
Program/erase definition
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
Please contact a Renesas Electronics sales office regarding data retention time other than the
above.
This value represents the number of erasures per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If 4-word write is performed in 512 different addresses in the block A of 4 Kbyte and then the
block is erased, it is considered the programming/erasure is performed just once.
However a write in the same address more than once for one erasure is disabled (overwrite
disabled).
RAM data retention voltage
Programming and erasure endurance of flash
memory
4-word program time
Lock bit-program time
Block erasure time
Data retention
RAM Electrical Characteristics
Flash Memory Electrical Characteristics
(V
(V
CC
CC
Rev.1.10
(1)
= 3.0 to 5.5 V, V
= 3.0 to 5.5 V, V
(2)
Characteristic
Characteristic
SS
SS
= 0 V, and Ta = T
= 0 V, and Ta = T
opr
opr
in stop mode
Program area
Data area
Program area
Data area
Program area
Data area
4 Kbyte block
32 Kbyte block
64 Kbyte block
T a = 55°C
Measurement
, unless otherwise noted)
, unless otherwise noted)
condition
(3)
10000
1000
Min.
Min.
2.0
10
5. Electrical Characteristics
Value
Value
0.12
0.17
0.20
Typ.
Typ.
150
300
140
70
Page 88 of 123
Max.
Max.
1700
1000
900
500
3.0
3.0
3.0
times
times
years
Unit
Unit
µs
µs
µs
µs
V
s
s
s

Related parts for R5F64189DFD#U0