M30879FLFP#U3 Renesas Electronics America, M30879FLFP#U3 Datasheet - Page 57

• Manufacturer Part Number: M30879FLFP#U3
• Description: IC M32C/87 MCU FLASH 100QFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M32C/80r

Specifications of M30879FLFP#U3

• Core Processor: M32C/80
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: CAN, EBI/EMI, I²C, IEBus, IrDA, SIO, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 85
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 26x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• For Use With: R0K330879S001BE - KIT DEV RSK M32C/87R0K330879S000BE - KIT DEV RSK M32C/87
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

M32C/87 Group (M32C/87, M32C/87A, M32C/87B)
REJ03B0127-0151 Rev.1.51 Jul 31, 2008
Page 55 of 85
Table 5.10
−
−
−
−
tps
−
Symbol
NOTE:
1. If erase and program endurance is n times (n = 100), each block can be erased n times. For example, if a 4-
Kbyte block A is erased after programming a word data 2,048 times, each to a different address, this counts as
one erase and program time. Data can not be programmed to the same address more than once without
erasing the block. (rewrite prohibited)
Erase and program endurance
Word program time (16 bits) (VCC1 = 5.0 V, Topr = 25°C)
Lock bit program time
Block erase time
(VCC1 = 5.0 V, Topr = 25°C)
Wait time to stabilize flash memory circuit
Data hold time (Topr = -40 to 85°C)
Flash Memory Electrical Characteristics (VCC1 = 4.5 V to 5.5 V, 3.0 to 3.6 V,
Topr = 0 to 60°C unless otherwise specified)
Parameter
(1)
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
Measurement Condition
VCC1 = VCC2 = 5V
Min.
100
10
5. Electrical Characteristics
Standard
Typ.
0.3
0.3
0.5
0.8
25
25
Max.
300
300
15
4
4
4
4
years
times
Unit
μs
μs
μs
s
s
s
s