PIC16F688-E/ST Microchip Technology, PIC16F688-E/ST Datasheet - Page 76

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PIC16F688-E/ST

Manufacturer Part Number
PIC16F688-E/ST
Description
IC MCU FLASH 4KX14 14TSSOP
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F688-E/ST

Program Memory Type
FLASH
Program Memory Size
7KB (4K x 14)
Package / Case
14-TSSOP
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Connectivity
UART/USART
Peripherals
Brown-out Detect/Reset, POR, WDT
Number Of I /o
12
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
SCI/USART
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
12
Number Of Timers
2
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163014, DM164120-4
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
Data Rom Size
256 B
Height
0.9 mm
Length
5 mm
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2 V
Width
4.4 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT14SS-1 - SOCKET TRANSITION 14DIP/14SSOPAC162061 - HEADER INTRFC MPLAB ICD2 20PINAC162056 - HEADER INTERFACE ICD2 16F688
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
PIC16F688
9.1.4
To read a program memory location, the user must
write two bytes of the address to the EEADR and
EEADRH registers, set the EEPGD control bit
(EECON1<7>),
(EECON1<0>). Once the read control bit is set, the
program memory Flash controller will use the second
instruction cycle to read the data. This causes the
second instruction immediately following the “
EECON1,RD
available in the very next cycle, in the EEDAT and
EEDATH registers; therefore, it can be read as two
bytes in the following instructions.
EXAMPLE 9-3:
DS41203B-page 74
;
;
NOP
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
NOP
MOVF
MOVF
READING THE FLASH PROGRAM
MEMORY
instruction to be ignored. The data is
STATUS, RP0
STATUS, RP1
MS_PROG_EE_ADDR
EEADRH
LS_PROG_EE_ADDR
EEADR
EECON1, EEPGD
EECON1, RD
EEDAT, W
EEDATH, W
and
FLASH PROGRAM READ
then
set
;
; Bank 1
;
; MS Byte of Program Address to read
;
; LS Byte of Program Address to read
; Point to PROGRAM memory
; EE Read
; First instruction after BSF EECON1,RD executes normally
; Any instructions here are ignored as program
; memory is read in second cycle after BSF EECON1,RD
; W = LS Byte of Program EEDAT
; W = MS Byte of Program EEDAT
control
bit
BSF
Preliminary
RD
EEDAT and EEDATH registers will hold this value until
another read or until it is written to by the user (during
a write operation).
Note 1: The two instructions following a program
2: If the WR bit is set when EEPGD = 1, it
memory read are required to be NOP’s.
This prevents the user from executing a
two-cycle
instruction after the RD bit is set.
will be immediately reset to ‘0’ and no
operation will take place.
 2004 Microchip Technology Inc.
instruction
on
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