ATMEGA162-16MUR Atmel, ATMEGA162-16MUR Datasheet - Page 224
![MCU AVR 16KB FLASH 16MHZ 44QFN](/photos/12/13/121316/313-44-qfn_sml.jpg)
ATMEGA162-16MUR
Manufacturer Part Number
ATMEGA162-16MUR
Description
MCU AVR 16KB FLASH 16MHZ 44QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA162-16MUR
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
EBI/EMI, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
35
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-VQFN Exposed Pad
For Use With
ATSTK600-TQFP44 - STK600 SOCKET/ADAPTER 44-TQFPATSTK500 - PROGRAMMER AVR STARTER KIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data Converters
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Self-programming
the Flash
Performing Page
Erase by SPM
Filling the Temporary
Buffer (Page Loading)
Performing a Page
Write
224
ATmega162/V
The program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page buf-
fer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
Alternative 1, fill the buffer before a Page Erase
•
•
•
Alternative 2, fill the buffer after Page Erase
•
•
•
If only a part of the page needs to be changed, the rest of the page must be stored (for example
in the temporary page buffer) before the erase, and then be rewritten. When using alternative 1,
the Boot Loader provides an effective Read-Modify-Write feature which allows the user software
to first read the page, do the necessary changes, and then write back the modified data. If alter-
native 2 is used, it is not possible to read the old data while loading since the page is already
erased. The temporary page buffer can be accessed in a random sequence. It is essential that
the page address used in both the Page Erase and Page Write operation is addressing the same
page. See
code example.
To execute Page Erase, set up the address in the Z-pointer, write “X0000011” to SPMCR and
execute SPM within four clock cycles after writing SPMCR. The data in R1 and R0 is ignored.
The page address must be written to PCPAGE in the Z-register. Other bits in the Z-pointer will
be ignored during this operation.
•
•
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001” to SPMCR and execute SPM within four clock cycles after writing SPMCR. The con-
tent of PCWORD in the Z-register is used to address the data in the temporary buffer. The
temporary buffer will auto-erase after a Page Write operation or by writing the RWWSRE bit in
SPMCR. It is also erased after a System Reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
Note:
To execute Page Write, set up the address in the Z-pointer, write “X0000101” to SPMCR and
execute SPM within four clock cycles after writing SPMCR. The data in R1 and R0 is ignored.
The page address must be written to PCPAGE. Other bits in the Z-pointer must be written zero
during this operation.
•
•
Fill temporary page buffer
Perform a Page Erase
Perform a Page Write
Perform a Page Erase
Fill temporary page buffer
Perform a Page Write
Page Erase to the RWW section: The NRWW section can be read during the Page Erase.
Page Erase to the NRWW section: The CPU is halted during the operation.
Page Write to the RWW section: The NRWW section can be read during the Page Write.
Page Write to the NRWW section: The CPU is halted during the operation.
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
“Simple Assembly Code Example for a Boot Loader” on page 227
for an assembly
2513K–AVR–07/09
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