ATSAM3S1BA-MU Atmel, ATSAM3S1BA-MU Datasheet - Page 26

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ATSAM3S1BA-MU

Manufacturer Part Number
ATSAM3S1BA-MU
Description
IC MCU 32BIT 64KB FLASH 64QFN
Manufacturer
Atmel
Series
SAM3Sr
Datasheets

Specifications of ATSAM3S1BA-MU

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
64MHz
Connectivity
I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Number Of I /o
47
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.62 V ~ 1.95 V
Data Converters
A/D 10x10/12b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-VQFN Exposed Pad, 64-HVQFN, 64-SQFN, 64-DHVQFN
Processor Series
ATSAM3x
Core
ARM Cortex M3
3rd Party Development Tools
JTRACE-CM3, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
ATSAM3S-EK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
6.3
6.4
6.5
26
Test Pin
NRST Pin
ERASE Pin
SAM3S Summary
The TST pin is used for JTAG Boundary Scan Manufacturing Test or Fast Flash programming
mode of the SAM3S series. The TST pin integrates a permanent pull-down resistor of about 15
kΩ to GND, so that it can be left unconnected for normal operations. To enter fast programming
mode, see the Fast Flash Programming Interface (FFPI) section. For more on the manufacturing
and test mode, refer to the “Debug and Test” section of the product datasheet.
The NRST pin is bidirectional. It is handled by the on-chip reset controller and can be driven low
to provide a reset signal to the external components or asserted low externally to reset the
microcontroller. It will reset the Core and the peripherals except the Backup region (RTC, RTT
and Supply Controller). There is no constraint on the length of the reset pulse and the reset con-
troller can guarantee a minimum pulse length. The NRST pin integrates a permanent pull-up
resistor to VDDIO of about 100 kΩ. By default, the NRST pin is configured as an input.
The ERASE pin is used to reinitialize the Flash content (and some of its NVM bits) to an erased
state (all bits read as logic level 1). It integrates a pull-down resistor of about 100 kΩ to GND, so
that it can be left unconnected for normal operations.
This pin is debounced by SCLK to improve the glitch tolerance. When the ERASE pin is tied high
during less than 100 ms, it is not taken into account. The pin must be tied high during more than
220 ms to perform a Flash erase operation.
The ERASE pin is a system I/O pin and can be used as a standard I/O. At startup, the ERASE
pin is not configured as a PIO pin. If the ERASE pin is used as a standard I/O, startup level of
this pin must be low to prevent unwanted erasing. Please refer to
nal Multiplexing on I/O Lines” on page
output, asserting the pin to low does not erase the Flash.
43. Also, if the ERASE pin is used as a standard I/O
Section 11.2 “Peripheral Sig-
6500CS–ATARM–24-Jan-11

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