ST7FLITE09Y0M6 STMicroelectronics, ST7FLITE09Y0M6 Datasheet - Page 16
ST7FLITE09Y0M6
Manufacturer Part Number
ST7FLITE09Y0M6
Description
MCU 8BIT 1.5KB FLSH 128KB 16SOIC
Manufacturer
STMicroelectronics
Series
ST7r
Datasheet
1.ST7FLITES2Y0B6.pdf
(124 pages)
Specifications of ST7FLITE09Y0M6
Core Processor
ST7
Core Size
8-Bit
Speed
8MHz
Connectivity
SPI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
13
Program Memory Size
1.5KB (1.5K x 8)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.4 V ~ 5.5 V
Data Converters
A/D 5x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC (3.9mm Width)
Processor Series
ST7FLITE0x
Core
ST7
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
13
Number Of Timers
2
Operating Supply Voltage
2.4 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
ST7FLIT0-IND/USB, ST7FLIT2-COS/COM, ST7FLITE-SK/RAIS, ST7MDT10-DVP3, ST7MDT10-EMU3, STX-RLINK
Minimum Operating Temperature
- 40 C
On-chip Adc
8 bit
For Use With
497-6250 - BOARD RGB COLOR CTRL STP04CM596497-5858 - EVAL BOARD PLAYBACK ST7FLITE497-5049 - KIT STARTER RAISONANCE ST7FLITE497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5633-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ST7FLITE09Y0M6
Manufacturer:
DIODES
Quantity:
43 000
Part Number:
ST7FLITE09Y0M6
Manufacturer:
ST
Quantity:
20 000
ST7LITE0xY0, ST7LITESxY0
5 DATA EEPROM
5.1 INTRODUCTION
The Electrically Erasable Programmable Read
Only Memory can be used as a non-volatile back-
up for storing data. Using the EEPROM requires a
basic access protocol described in this chapter.
Figure 7. EEPROM Block Diagram
16/124
1
EECSR
0
ADDRESS BUS
0
DECODER
ADDRESS
0
0
4
0
DECODER
0
4
4
ROW
E2LAT
5.2 MAIN FEATURES
■
■
■
■
■
■
E2PGM
Up to 32 bytes programmed in the same cycle
EEPROM mono-voltage (charge pump)
Chained erase and programming cycles
Internal control of the global programming cycle
duration
WAIT mode management
Read-out protection
128
MULTIPLEXER
DATA
(1 ROW = 32 x 8 BITS)
MEMORY MATRIX
HIGH VOLTAGE
DATA BUS
EEPROM
PUMP
DATA LATCHES
128
32 x 8 BITS