MC9S08FL8CBM Freescale Semiconductor, MC9S08FL8CBM Datasheet - Page 12

• Manufacturer Part Number: MC9S08FL8CBM
• Description: MCU 8BIT 8K FLASH 32-SDIP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08FL8CBM

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: SCI
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 30
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SDIP (0.400", 10.16mm)
• Processor Series: S08FL
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 768 B
• Interface Type: SCI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 30
• Number Of Timers: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08FL16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12-ch x 8-bit
• Controller Family/series: HCS08
• No. Of I/o's: 30
• Ram Memory Size: 768Byte
• Cpu Speed: 20MHz
• No. Of Timers: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
5.6
This section includes information about power supply requirements and I/O pin characteristics.
12
Num C
11a
11b
10
1
2
3
4
5
6
7
8
9
P Operating voltage
C
P
D
C
P
D
P
P
C
P
P
C
C
Output high
voltage
Output high
current
Output low
voltage
Output low
current
Input high
voltage
Input low
voltage
Input
hysteresis
Input
leakage
current
Hi-Z
(off-state)
leakage
current
Pullup,
pulldown
resistors
Pullup,
pulldown
resistors
DC Characteristics
1
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
No.
1
2
3
Characteristic
(PTA5/IRQ/TCLK/RESET)
enabled (all I/O pins other
PTA5/IRQ/TCLK/RESET)
Max total I
Max total I
Human body model (HBM)
Charge device model (CDM)
Latch-up current at T
All digital inputs, when
Table 6. ESD and Latch-Up Protection Characteristics
high-drive strength
high-drive strength
low-drive strength
low-drive strength
All input only pins
All digital inputs
All digital inputs
All digital inputs
All input/output
OH
OL
All I/O pins,
All I/O pins,
All I/O pins,
All I/O pins,
for all ports
for all ports
Rating
MC9S08FL16 Series Data Sheet, Rev. 3
(per pin)
(per pin)
than
Table 7. DC Characteristics
1
A
= 85 C
Symbol
(Note
R
R
I
V
|I
V
V
I
R
R
V
|I
OHT
V
OLT
—
OZ
OH
hys
PU,
PU,
OL
In
PD
PD
IH
IL
|
|
2
)
V
V
I
Symbol
In
I
Load
I
In
Load
I
Load
V
V
Load
Condition
I
= V
= V
HBM
CDM
LAT
= –10 mA
= –2 mA
= 10 mA
DD
DD
—
—
—
—
—
—
—
—
= 2 mA
or V
or V
SS
SS
2000
500
100
Min
0.65  V
0.06  V
V
V
DD
DD
Min.
17.5
17.5
4.5
—
—
—
—
—
—
—
– 1.5
– 1.5
DD
DD
Max
—
—
—
Typical
36.5
36.5
0.1
0.1
—
—
—
—
—
—
—
—
—
—
Freescale Semiconductor
1
Unit
mA
0.35  V
V
V
Max.
52.5
52.5
100
100
5.5
1.5
1.5
—
—
—
—
1
1
DD
Unit
mA
mA
mV
A
A
k
k
V
V
V
V
V