S9S08SG16E1VTJ Freescale Semiconductor, S9S08SG16E1VTJ Datasheet - Page 323
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S9S08SG16E1VTJ
Manufacturer Part Number
S9S08SG16E1VTJ
Description
MCU 16K FLASH 20-TSSOP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.S9S08SG16E1CTG.pdf
(330 pages)
Specifications of S9S08SG16E1VTJ
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
20-TSSOP
Processor Series
S08SG
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
I2C, SPI, SCI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
22
Number Of Timers
2
Operating Supply Voltage
- 0.3 V to + 5.8 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08SG32, DEMO9S08SG32AUTO, DEMO9S08SG8, DEMO9S08SG8AUTO
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
On-chip Dac
10 bit, 16 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S9S08SG16E1VTJ SG16SVTJ
Manufacturer:
FREESCALE
Quantity:
20 000
Part Number:
S9S08SG16E1VTJR
Manufacturer:
FREESCALE
Quantity:
20 000
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A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
3
4
10
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
#
1
2
3
4
5
6
7
8
9
—
—
—
—
—
—
—
—
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/f
Byte program time (random
location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T
L
L
2
to T
to T
Characteristic
H
H
4
= –40°C to +125°C
= –40°C to +150°C
2
2
1
FCLK
T = 25°C
3
Table A-16. Flash Characteristics
)
MC9S08SG32 Data Sheet, Rev. 8
2
Symbol
V
V
n
prog/era
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
FLPE
Read
prog
se
10,000
10,000
10,000
Min
150
2.7
2.7
15
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
—
9
4
Appendix A Electrical Characteristics
Max
6.67
200
5.5
5.5
—
—
—
—
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
DD
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
—
Rated
Temp
supply.
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
—
323
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