MCF52210CAE66 Freescale Semiconductor, MCF52210CAE66 Datasheet - Page 30

• Manufacturer Part Number: MCF52210CAE66
• Description: IC MCU 64K FLASH 66MHZ 64LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF5221xr

Specifications of MCF52210CAE66

• Core Processor: Coldfire V2
• Core Size: 32-Bit
• Speed: 66MHz
• Connectivity: I²C, SPI, UART/USART, USB OTG
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 43
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: MCF522x
• Core: ColdFire V2
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: I2C/QSPI/UART
• Maximum Clock Frequency: 66 MHz
• Number Of Programmable I/os: 43
• Number Of Timers: 18
• Operating Supply Voltage: - 0.3 V to + 4 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JLINK-CF-BDM26, EWCF
• Development Tools By Supplier: M52210DEMO, M52211EVB
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 12-bit
• Package: 64LQFP
• Device Core: ColdFire
• Family Name: MCF5221x
• Maximum Speed: 66 MHz
• For Use With: M52210DEMO - BOARD DEV MCF5221X LOW COST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2.4
The flash memory characteristics are shown in
Freescale Semiconductor
1
2
System clock (read only)
System clock (program/erase)
1
2
3
4
5
6
The average chip-junction temperature (T
Where:
For most applications P
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring P
for a known T
any value of T
Refer to the flash memory section for more information
Depending on packaging; see the orderable part number summary.

recommends the use of 
temperatures from exceeding the rated specification. System designers should be aware that device junction temperatures
can be significantly influenced by board layout and surrounding devices. Conformance to the device junction temperature
specification can be verified by physical measurement in the customer’s system using the 
dissipation, and the method described in EIA/JESD Standard 51-2.
Per JEDEC JESD51-2 with the single-layer board (JESD51-3) horizontal.
Per JEDEC JESD51-6 with the board JESD51-7) horizontal.
Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
in conformance with Psi-JT.
JA
and 
Flash Memory Characteristics
T

P
P
P
A
D
INT
I/O
jt
JA
A
parameters are simulated in conformance with EIA/JESD Standard 51-2 for natural convection. Freescale
A
. Using this value of K, the values of P
.
Parameter
= ambient temperature, C
= package thermal resistance, junction-to-ambient, C/W
= P
= chip internal power, I
= power dissipation on input and output pins — user determined, watts
I/O
INT
 P
Table 23. SGFM Flash Program and Erase Characteristics
JA
P
INT
K = P
2
and power dissipation specifications in the system design to prevent device junction
I/O
and can be ignored. An approximate relationship between P
D
 (T
MCF52211 ColdFire Microcontroller, Rev. 2
J
A
) in C can be obtained from:
+ 273 C) + 
P
DD
T
Table 23
D
J
 V
=
=
K
T
DD
(V
A
D

DD
+
, watts
and T
Symbol

f
and
sys(P/E)
f
T

sys(R)
P
J
= 3.0 to 3.6 V)
JMA
+
D
Table
J
273C

can be obtained by solving equations (1) and (2) iteratively for
 P

JMA
D
24.

2

(1)
(2)
(3)
0.15
Min
0
Typ
—
—
D
jt
and T
parameter, the device power
Electrical Characteristics
J
(if P
50–80
102.4
Max
I/O
D
is neglected) is:
1
(at equilibrium)
MHz
MHz
Unit
30