MC908GR16VFAE Freescale Semiconductor, MC908GR16VFAE Datasheet - Page 267

• Manufacturer Part Number: MC908GR16VFAE
• Description: IC MCU 16K FLASH 8MHZ 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908GR16VFAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: LIN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 37
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 48-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 37
• Ram Memory Size: 1KB
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08GR
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 33
• Number Of Timers: 4
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

20.15 Memory Characteristics
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance
FLASH data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
Limited endurance (<1 K cycles)
Maximum endurance (>1 K cycles)
memory.
memory.
HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Read
RCV
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the frequency range for which the FLASH memory can be read.
(6)
Characteristic
(7)
NVS
+ t
Erase
MErase
NVH
MC68HC908GR16 Data Sheet, Rev. 5.0
(min), there is no erase disturb, but it reduces the endurance of the FLASH
+ t
(min), there is no erase disturb, but it reduces the endurance of the FLASH
PGS
+ (t
PROG
x 32) ≤ t
t
Symbol
MErase
t
f
HV
t
Erase
Read
t
V
t
RCV
t
PROG
t
t
t
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
maximum.
(5)
(4)
(1)
(2)
(3)
10 k
Min
100
1.3
0.9
3.6
10
30
15
—
1
0
4
5
5
1
100 k
Typ
100
—
—
—
—
—
—
—
—
—
—
—
1
4
Memory Characteristics
Max
8 M
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V
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