MC908AP32ACFAE Freescale Semiconductor, MC908AP32ACFAE Datasheet - Page 43
![IC MCU 32K FLASH 8MHZ 48-LQFP](/photos/37/62/376278/tqfp-48_sml.jpg)
MC908AP32ACFAE
Manufacturer Part Number
MC908AP32ACFAE
Description
IC MCU 32K FLASH 8MHZ 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908AP16ACFBER.pdf
(316 pages)
Specifications of MC908AP32ACFAE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, IRSCI, SCI, SPI
Peripherals
LED, LVD, POR, PWM
Number Of I /o
32
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
HC08AP
Core
HC08
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908AP64E, M68CBL05CE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC908AP32ACFAE
Manufacturer:
FSC
Quantity:
15 000
Company:
Part Number:
MC908AP32ACFAE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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2.5.2 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operation.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
2.5.3 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page consists of 512 consecutive
bytes starting from addresses $X000, $X200, $X400, $X600, $X800, $XA00, $XC00, or $XE00. The
48-byte user interrupt vectors cannot be erased by the page erase operation because of security reasons.
Mass erase is required to erase this page.
Freescale Semiconductor
1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Write any data to any FLASH location within the page address range desired.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
This read/write bit configures the memory for mass erase operation or page erase operation when the
ERASE bit is set.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
Address:
Reset:
Read:
Write:
erase
$FE08
nvs
nvh
Bit 7
0
0
(5 µs).
(5 µs).
(20 ms).
Figure 2-3. FLASH Control Register (FLCR)
MC68HC908AP A-Family Data Sheet, Rev. 3
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
PGM
Bit 0
0
FLASH Memory
43
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