MCF52231CAF60 Freescale Semiconductor, MCF52231CAF60 Datasheet - Page 31

• Manufacturer Part Number: MCF52231CAF60
• Description: IC MCU 32BIT 128K FLASH 80-LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF5223xr

Specifications of MCF52231CAF60

• Core Processor: Coldfire V2
• Core Size: 32-Bit
• Speed: 60MHz
• Connectivity: CAN, Ethernet, I²C, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 73
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 80-LQFP
• Processor Series: MCF522x
• Core: ColdFire V2
• Data Bus Width: 32 bit
• Data Ram Size: 32 KB
• Interface Type: I2C/QSPI/UART
• Maximum Clock Frequency: 60 MHz
• Number Of Programmable I/os: 56
• Number Of Timers: 10
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JLINK-CF-BDM26, EWCF
• Development Tools By Supplier: M52235EVB, M52233DEMO
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 12-bit
• Controller Family/series: ColdFire
• No. Of I/o's: 43
• Ram Memory Size: 16KB
• Cpu Speed: 60MHz
• No. Of Timers: 1
• Embedded Interface Type: CAN, I2C, UART
• Rohs Compliant: Yes
• Package: 80LQFP
• Device Core: ColdFire
• Family Name: MCF5223x
• Maximum Speed: 60 MHz
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

The average chip-junction temperature (T
where
For most applications, PI/O < P
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from
for a known T
for any value of T
2.2
Freescale Semiconductor
•
•
•
•
•
1
ESD target for Human Body Model
ESD target for Charged Device Model
HBM circuit description
Number of pulses per pin (HBM)
positive pulses
negative pulses
Number of pulses per pin (CDM)
positive pulses
negative pulses
Interval of pulses (HBM)
Interval of pulses (CDM)
T

P
P
P
A device is defined as a failure if the device no longer meets the device specification requirements after
exposure to ESD pulses. Complete DC parametric and functional testing is performed per applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A
D
INT
I/O
JMA
ESD Protection
= ambient temperature, C
= P
= power dissipation on input and output pins — user determined
A
= chip internal power, I
. Using this value of K, the values of P
= package thermal resistance, junction-to-ambient, C/W
INT
A
.
+ P
I/O
Characteristic
INT
MCF52235 ColdFire Microcontroller Data Sheet, Rev. 10
and can be ignored. An approximate relationship between P
DD
Table 21. ESD Protection Characteristics
K
 V
J
=
) in C can be obtained from
P
DD
D
P
T
, watts
J
D

=

=
T
A
D
T
K
A
+
and T

+
273C


Symbol
T
R
P
HBM
CDM
J
J
series
D
—
—
—
—
—
—
can be obtained by solving
C
+


273C

+
JMA

JMA


1500 (ADC and EPHY pins)

2000 (All other pins)
P
D
2
Equation 3
Value
1500
250
100
1.0
0.2
1
1
3
3
1
Equation 1
by measuring P
D
and T
Electrical Characteristics
and
J
(if P
Equation 2
Units
ohms
I/O
D
sec
sec
pF
—
—
V
V
(at equilibrium)
is neglected) is:
iteratively
Eqn. 1
Eqn. 2
Eqn. 3
31