M30622F8PFP#D5C Renesas Electronics America, M30622F8PFP#D5C Datasheet - Page 79
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M30622F8PFP#D5C
Manufacturer Part Number
M30622F8PFP#D5C
Description
IC M16C MCU FLASH 64K 100-QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/60r
Datasheet
1.QSK-62P_PLUS.pdf
(103 pages)
Specifications of M30622F8PFP#D5C
Core Processor
M16C/60
Core Size
16-Bit
Speed
24MHz
Connectivity
I²C, IEBus, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M30622F8PFP#D5CM30622F8PFP#U3C
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
M30622F8PFP#D5CM30622F8PFP#U5C
Manufacturer:
Renesas Electronics America
Quantity:
10 000
M16C/62P Group (M16C/62P, M16C/62PT)
Rev.2.41
REJ03B0001-0241
Figure 5.17
Memory Expansion Mode, Microprocessor Mode
(for 1-wait setting and external area access)
Read timing
Write timing
t
cyc
Measuring conditions
BCLK
CSi
ADi
BHE
ALE
RD
DBi
BCLK
CSi
ADi
BHE
ALE
WR,WRL,
WRH
DBi
· V
· Input timing voltage : V
· Output timing voltage : V
=
Jan 10, 2006
CC1
f(BCLK)
=V
1
Timing Diagram (5)
CC2
=3V
t
d(BCLK−ALE)
t
t
d(BCLK−ALE)
d(BCLK−CS)
t
t
d(BCLK−CS)
d(BCLK−AD)
t
30ns.max
30ns.max
d(BCLK−AD)
30ns.max
30ns.max
30ns.max
30ns.max
Page 77 of 96
Hi−Z
t
t
cyc
cyc
IL
=0.6V, V
OL
t
h(BCLK−ALE)
Hi−Z
=1.5V, V
t
t
d(BCLK−RD)
h(BCLK−ALE)
−4ns.min
30ns.max
−4ns.min
IH
=2.4V
OH
(1.5 × t
=1.5V
t
d(BCLK−WR)
(0.5 × t
t
t
ac2(RD−DB)
d(BCLK−DB)
cyc
30ns.max
40ns.max
t
−60)ns.max
d(DB−WR)
cyc
−40)ns.min
t
su(DB−RD)
50ns.min
(0.5 × t
t
h(BCLK−WR)
t
h(WR−AD)
t
0ns.min
h(WR−DB)
(0.5 × t
t
0ns.min
h(RD−AD)
cyc
−10)ns.min
cyc
−10)ns.min
t
h(BCLK−CS)
t
h(BCLK−CS)
t
t
t
t
h(BCLK−DB)
h(BCLK−AD)
h(BCLK−AD)
h(BCLK−RD)
4ns.min
4ns.min
0ns.min
4ns.min
4ns.min
4ns.min
t
h(RD−DB)
0ns.min
V
CC1
5. Electrical Characteristics
=V
CC2
=3V