M30865FJGP#D5 Renesas Electronics America, M30865FJGP#D5 Datasheet - Page 53

• Manufacturer Part Number: M30865FJGP#D5
• Description: IC M32C MCU FLASH 512K 100-LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M32C/80r

Specifications of M30865FJGP#D5

• Core Processor: M32C/80
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: CAN, I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 123
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 34x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

R
R
M
e
E
3
. v
J
Figure 5.3 V
2
0
1
C
3
0 .
B
8 /
0
0
6
0
Memory Expansion Mode and Microprocessor Mode
(when accessing an external memory space)
4
S
CSi
ADi
BHE
CSi
DBi
BCLK
RD
NOTES:
ADi
BHE
WR,WRL,
WRH
DB
BCLK
G
[ Read Timing ]
8
[ Write timing ]
e
0 -
o r
. p
NOTES:
1
u
A maximum of 35ns is guaranteed for t
1. Values guaranteed only when the microcomputer is used independently.
2. Varies with operation frequency:
0
0
p
3. Varies with operation frequency:
, 9
0
CC
(
t
(if external bus cycle is a +b , m=b)
t
t
t
t
(if external bus cycle is a +b , n=(bx2)-1)
M
2
d(DB-WR)
h(WR-DB)
h(WR-AD)
h(WR-CS)
w(WR)
t
t
ac1(RD-DB)
ac1(AD-DB)
0
=5V Timing Diagram (1)
3
t
0
d(BCLK-AD)
2
5
C
=(tcyc/2 x n-15)ns.min
Page 51
8 /
=(tcyc x m-20)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
t
t
t
18ns.max
18ns.max
18ns.max
18ns.max
t
18ns.max
d(BCLK-AD)
d(BCLK-CS)
d(BCLK-CS)
d(BCLK-RD)
, 6
=(tcyc/2 x m-35)ns.max (if external bus cycle is a + b , m=(b x 2)+1)
=(tcyc x n-35)ns.max (if external bus cycle is a + b , n=a+b)
M
tcyc
(1 +1 Bus Cycle)
tcyc
(1 +1 Bus Cycle)
3
2
(1)
(1)
C
f o
8 /
t
t
d(BCLK-WR)
18ns.max
6
6
ac1(AD-DB)
7
) T
Hi-Z
t
d(DB-WR)
d(BCLK-AD)
(2)
t
ac1(RD-DB)
(3)
t
t
w(WR)
su(DB-BCLK)
26ns.min
+t
(3)
su(DB-BCLK)
(2)
Measurement Conditions:
(1)
tcyc=
t
t
h(WR-DB)
t
h(BCLK-WR)
• V
• Input high and low voltage: V
• Output high and low voltage: V
h(WR-CS)
t
-5ns.min
h(WR-AD)
CC
f
(BCLK)
.
=4.2 to 5.5V
10
9
(3)
(3)
(3)
t
h(BCLK-AD)
t
t
t
h(BCLK-CS)
-3ns.min
-3ns.min
t
h(BCLK-AD)
h(BCLK-CS)
-3ns.min
h(BCLK-RD)
-5ns.min
-3ns.min
0ns.min
t
t
t
h(RD-DB)
0ns.min
h(RD-CS)
0ns.min
h(RD-AD)
5. Electrical Characteristics (M32C/86)
IH
=2.5V, V
OH
=2.0V, V
IL
=0.8V
OL
Vcc=5V
=0.8V