M30865FJGP#D5 Renesas Electronics America, M30865FJGP#D5 Datasheet - Page 54

• Manufacturer Part Number: M30865FJGP#D5
• Description: IC M32C MCU FLASH 512K 100-LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M32C/80r

Specifications of M30865FJGP#D5

• Core Processor: M32C/80
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: CAN, I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 123
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 34x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

R
R
M
e
E
. v
3
J
Figure 5.4 V
0
2
1
3
C
0 .
B
8 /
0
0
0
6
Memory Expansion Mode and Microprocessor Mode
(when accessing an external memory space with the multiplexed bus)
4
S
G
8
e
0 -
o r
[ Read Timing ] (2 +2 Bus Cycle)
CSi
ADi
RD
[ Write Timing ] (2 +2 Bus Cycle)
CSi
ADi
WR,WRL,
WRH
. p
BCLK
ALE
ADi
/DBi
BHE
BCLK
ALE
ADi
/DBi
BHE
NOTES:
NOTES:
1
u
0
0
1. Varies with operation frequency:
p
, 9
2. Varies with operation frequency:
0
CC
(
t
t
t
t
t
d(AD-ALE)
h(ALE-AD)
h(RD-AD)
ac2(RD-DB)
ac2(AD-DB)
2
M
t
(if external bus cycle is a + b , n=a)
t
(if external bus cycle is a + b , n=a)
t
t
t
(if external bus cycle is a + b , m=(b x 2)-1)
d(AD-ALE)
h(ALE-AD)
h(WR-AD)
h(WR-CS)
d(DB-WR)
0
=5V Timing Diagram (2)
3
0
2
5
18ns.max
t
C
d(BCLK-ALE)
t
18ns.max
d(BCLK-ALE)
=(tcyc/2-10)ns.min, t
Page 52
8 /
=(tcyc/2 x n-20)ns.min (if external bus cycle is a + b , n=a)
=(tcyc/2 x n-10)ns.min (if external bus cycle is a + b , n=a)
=(tcyc/2-10)ns.min,
=(tcyc/2-10)ns.min, t
=(tcyc/2 x m-25)ns.min
=(tcyc/2 x m-35)ns.max (if external bus cycle is a + b , m=(b x 2)-1)
=(tcyc/2 x p-35)ns.max (if external bus cycle is a + b , p={(a+b-1) x 2}+1)
=(tcyc/2 x n - 20)ns.min
=(tcyc/2 x n -10)ns.min
t
d(BCLK-CS)
, 6
18ns.max
t
t
t
18ns.max
18ns.max
d(BCLK-AD)
d(BCLK-CS)
18ns.max
d(BCLK-AD)
t
t
d(AD-ALE)
M
d(AD-ALE)
t
ac2(AD-DB)
3
2
C
f o
8 /
(1)
(2)
6
6
7
) T
(1)
h(RD-CS)
Address
Address
h(WR-DB)
t
h(BCLK-ALE)
t
h(BCLK-ALE)
-2ns.min
-2ns.min
=(tcyc/2-10)ns.min
t
h(ALE-AD)
=(tcyc/2-10)ns.min
t
h(ALE-AD)
(2)
(1)
t
t
d(BCLK-RD)
d(BCLK-WR)
18ns.max
t
dz(RD-AD)
18ns.max
8ns.max
t
ac2(RD-DB)
tcyc
tcyc
t
d(DB-WR)
tcyc=
Measurement Conditions:
• V
• Input high and low voltage:
• Output high and low voltage:
(1)
t
t
su(DB-BCLK)
h(BCLK-WR)
f
CC
t
(BCLK)
Data output
5. Electrical Characteristics (M32C/86)
h(BCLK-RD)
-5ns.min
(2)
-5ns.min
10
=4.2 to 5.5V
V
V
IH
OH
9
=2.5V, V
Data input
=2.0V, V
t
h(WR-CS)
26ns.min
t
0ns.min
h(RD-DB)
t
IL
h(RD-CS)
t
OL
=0.8V
t
h(WR-DB)
t
h(WR-AD)
h(RD-AD)
=0.8V
(2)
Vcc=5V
(1)
(2)
t
h(BCLK-AD)
(1)
(2)
t
-3ns.min
t
t
-3ns.min
h(BCLK-CS)
Address
-3ns.min
h(BCLK-CS)
-3ns.min
h(BCLK-AD)
Address