MC68HC11F1CFN2 Freescale Semiconductor, MC68HC11F1CFN2 Datasheet - Page 53

• Manufacturer Part Number: MC68HC11F1CFN2
• Description: IC MCU 512 EEPROM 2MHZ 68-PLCC
• Manufacturer: Freescale Semiconductor
• Series: HC11r

Specifications of MC68HC11F1CFN2

• Core Processor: HC11
• Core Size: 8-Bit
• Speed: 2MHz
• Connectivity: SCI, SPI
• Peripherals: POR, WDT
• Number Of I /o: 30
• Program Memory Type: ROMless
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.75 V ~ 5.25 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 68-PLCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Program Memory Size: -

4.4.1.2 EEPROM Bulk Erase
4.4.1.3 EEPROM Row Erase
TECHNICAL DATA
Recall that zeros must be erased by a separate erase operation before programming.
The following example of how to program an EEPROM byte assumes that the appro-
priate bits in BPROT have been cleared and the data to be programmed is present in
accumulator A.
To erase the EEPROM, ensure that the proper bits of the BPROT register are cleared,
then complete the following steps using the PPROG register:
The following is an example of how to bulk erase the 512-byte EEPROM. The CONFIG
register is not affected in this example. When bulk erasing the CONFIG register, CON-
FIG and the 512-byte array are all erased.
The following example shows how to perform a fast erase of large sections of EE-
PROM and assumes that index register X contains the address of a location in the de-
sired row.
BULKE
PROG
1. Write to PPROG with the ERASE, EELAT, and appropriate BYTE and ROW
2. Write to the appropriate EEPROM address with any data. Row erase only re-
3. Write to PPROG with ERASE, EELAT, EEPGM, and the appropriate BYTE and
4. Delay for 10 ms or more, as appropriate.
5. Clear the EEPGM bit in PPROG to turn off the high voltage.
6. Return to step 1 for next byte or row or proceed to step 7.
7. Clear the PPROG register to reconfigure the EEPROM address and data buses
bits set.
quires a write to any location in the row. Bulk erase is accomplished by writing
to any location in the array.
ROW bits set.
for normal operation.
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
CLR
JSR
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EELAT=1, EEPGM=0
Set EELAT bit
Store data to EEPROM address
EELAT=1, EEPGM=1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set to READ mode
ERASE=1, EELAT=1, EEPGM=0
Set EELAT bit
Store any data to any EEPROM address
EELAT=1, EEPGM=1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set to READ mode
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