MC68HC908GR16VFJ Freescale Semiconductor, MC68HC908GR16VFJ Datasheet - Page 39

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MC68HC908GR16VFJ

Manufacturer Part Number
MC68HC908GR16VFJ
Description
IC MCU 16K FLASH 8MHZ SPI 32LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908GR16VFJ

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
LIN, SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
21
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
32-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
MC68HC908GR16VFJ
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Programming tools are available from Freescale Semiconductor. Contact your local representative for
more information.
2.6.1.1 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
1. No security feature is absolutely secure. However, Freescale’s strategy is to make reading or copying the FLASH difficult for
Freescale Semiconductor
unauthorized users.
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the 16-Kbyte FLASH array for mass erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = MASS erase operation selected
0 = PAGE erase operation selected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
A security feature prevents viewing of the FLASH contents.
Reset:
Read:
Write:
$FE08
Bit 7
0
0
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
MC68HC908GR16 Data Sheet, Rev. 5.0
5
0
0
NOTE
4
0
0
HVEN
3
0
MASS
2
0
(1)
ERASE
1
0
FLASH Memory (FLASH)
PGM
Bit 0
0
39

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