MCHC11F1CFNE3 Freescale Semiconductor, MCHC11F1CFNE3 Datasheet - Page 54

• Manufacturer Part Number: MCHC11F1CFNE3
• Description: IC MCU 8BIT 1K RAM 68-PLCC
• Manufacturer: Freescale Semiconductor
• Series: HC11r

Specifications of MCHC11F1CFNE3

• Core Processor: HC11
• Core Size: 8-Bit
• Speed: 3MHz
• Connectivity: SCI, SPI
• Peripherals: POR, WDT
• Number Of I /o: 30
• Program Memory Type: ROMless
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.75 V ~ 5.25 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 68-PLCC
• A/d Inputs: 8-Channel, 8-Bit
• Eeprom Memory: 512 Bytes
• Input Output: 30
• Interface: SCI/SPI
• Memory Type: EPROM
• Number Of Bits: 8
• Package Type: 68-pin PLCC
• Programmable Memory: 0 Bytes
• Timers: 3-16-bit
• Voltage, Range: 3-5.5 V
• Controller Family/series: 68HC11
• No. Of I/o's: 30
• Eeprom Memory Size: 512Byte
• Ram Memory Size: 1KB
• Cpu Speed: 3MHz
• No. Of Timers: 1
• Embedded Interface Type: SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC11F
• Core: HC11
• Data Bus Width: 8 bit
• Program Memory Size: 512 B
• Data Ram Size: 1 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 3 MHz
• Number Of Timers: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Program Memory Size: -
• Lead Free Status / Rohs Status: RoHS Compliant part

4.4.1.4 EEPROM Byte Erase
4.4.2 PPROG EEPROM Programming Control Register
PPROG — EEPROM Programming Control
ODD — Program Odd Rows in Half of EEPROM (TEST)
EVEN — Program Even Rows in Half of EEPROM (TEST)
Bit 5 — Not implemented
BYTE — Byte/Other EEPROM Erase Mode
ROW — Row/All EEPROM Erase Mode (only valid when BYTE = 0)
4-16
RESET:
The following is an example of how to erase a single byte of EEPROM and assumes
that index register X contains the address of the byte to be erased.
Bits in PPROG register control parameters associated with EEPROM programming.
Always reads zero
BYTEE
ROWE
0 = Row or bulk erase mode used
1 = Erase only one byte of EEPROM
0 = All 512 bytes of EEPROM erased
1 = Erase only one 16-byte row of EEPROM
ODD
Bit 7
0
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
EVEN
6
0
Freescale Semiconductor, Inc.
OPERATING MODES AND ON-CHIP MEMORY
#$0E
$103B
0,X
#$0F
$103B
DLY10
$103B
#$16
$103B
0,X
#$17
$103B
DLY10
$103B
For More Information On This Product,
—
5
0
Go to: www.freescale.com
BYTE
ROW=1, ERASE=1, EELAT=1, EEPGM=0
Set to ROW erase mode
Store any data to any address in ROW
ROW=1, ERASE=1, EELAT=1, EEPGM=1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set to READ mode
BYTE=1, ROW=0, ERASE=1, EELAT=1, EEPGM=0
Set to BYTE erase mode
Store any data to address to be erased
BYTE=1, ROW=0, ERASE=1, EELAT=1, EEPGM=1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set to READ mode
4
0
ROW
0
3
ERASE
2
0
EELAT
1
0
EEPGM
TECHNICAL DATA
Bit 0
0
MC68HC11F1
$103B