MC908GR16ACFAER Freescale Semiconductor, MC908GR16ACFAER Datasheet - Page 262
![no-image](/images/manufacturer_photos/0/2/262/freescale_semiconductor_sml.jpg)
MC908GR16ACFAER
Manufacturer Part Number
MC908GR16ACFAER
Description
IC MCU 16K FLASH 8MHZ 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908GR16ACFAE.pdf
(270 pages)
Specifications of MC908GR16ACFAER
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
LIN, SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
37
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC908GR16ACFAER
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Electrical Specifications
20.15 Memory Characteristics
262
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance
FLASH data retention time
1. f
2. t
3. t
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
Limited endurance (<1 K cycles)
Maximum endurance (>1 K cycles)
clearing HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Read
RCV
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
(4)
Characteristic
(5)
NVS
+ t
MC68HC908GR16A Data Sheet, Rev. 1.0
NVH
+ t
PGS
+ (t
PROG
x 32) ≤ t
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
maximum.
(3)
(2)
(1)
10 k
Min
100
1.3
0.9
3.6
10
30
15
—
1
0
4
5
5
1
100 k
Typ
100
—
—
—
—
—
—
—
—
—
—
—
1
4
Freescale Semiconductor
Max
8 M
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
µs
µs
µs
µs
µs
µs
V
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