MC9S08RE16FDE Freescale Semiconductor, MC9S08RE16FDE Datasheet - Page 218

• Manufacturer Part Number: MC9S08RE16FDE
• Description: IC MCU 16K FLASH 1K RAM 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08RE16FDE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

Electrical Characteristics
A.10 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the
218
1. The frequency of this clock is controlled by a software setting.
2. These values are hardware state machine controlled. User code does not need to count cycles. This information
3. Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
4. Typical data retention values are based on intrinsic capability of the technology measured at high temperature
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
supplied for calculating approximate time to program and erase.
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
0 < f
T
T = 25°C
L
to T
Bus
H
< 8 MHz
= –40°C to + 85°C
Characteristic
(4)
(2)
(2)
(1)
(3)
MC9S08RC/RD/RE/RG Data Sheet, Rev. 1.11
(2)
Table A-12. FLASH Characteristics
(2)
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
prog
Read
10,000
2.05
Min
150
1.8
15
5
100,000
Typical
20,000
4000
100
9
4
Memory
chapter.
Max
6.67
200
3.6
3.6
—
—
—
Freescale Semiconductor
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
µs
V
V
DD
supply.