MC9S08DV16MLF Freescale Semiconductor, MC9S08DV16MLF Datasheet - Page 52
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MC9S08DV16MLF
Manufacturer Part Number
MC9S08DV16MLF
Description
IC MCU 16K FLASH 1K RAM 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Specifications of MC9S08DV16MLF
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
48-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08DV16MLF
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Chapter 4 Memory
4.4
The MC9S08DV60 Series includes static RAM. The locations in RAM below 0x0100 can be accessed
using the more efficient direct addressing mode, and any single bit in this area can be accessed with the bit
manipulation instructions (BCLR, BSET, BRCLR, and BRSET). Locating the most frequently accessed
program variables in this area of RAM is preferred.
The RAM retains data while the MCU is in low-power wait, stop2, or stop3 mode. At power-on the
contents of RAM are uninitialized. RAM data is unaffected by any reset if the supply voltage does not drop
below the minimum value for RAM retention (V
For compatibility with M68HC05 MCUs, the HCS08 resets the stack pointer to 0x00FF. In the
MC9S08DV60 Series, it is usually best to reinitialize the stack pointer to the top of the RAM so the direct
page RAM can be used for frequently accessed RAM variables and bit-addressable program variables.
Include the following 2-instruction sequence in your reset initialization routine (where RamLast is equated
to the highest address of the RAM in the Freescale Semiconductor equate file).
When security is enabled, the RAM is considered a secure memory resource and is not accessible through
BDM or code executing from non-secure memory. See
of the security feature.
4.5
MC9S08DV60 Series devices include Flash memory intended primarily for program and data storage.
In-circuit programming allows the operating program and data to be loaded into Flash after final assembly
of the application product. It is possible to program the arrays through the single-wire background debug
interface. Because no special voltages are needed for erase and programming operations, in-application
programming is also possible through other software-controlled communication paths. For a more detailed
discussion of in-circuit and in-application programming, refer to the HCS08 Family Reference Manual,
Volume I, Freescale Semiconductor document order number HCS08RMv1.
4.5.1
Features of the Flash include:
52
•
•
•
•
•
•
•
•
•
Array size (see
Flash sector size: 768 bytes
Single power supply program and erase
Command interface for fast program and erase operation
Up to 100,000 program/erase cycles at typical voltage and temperature
Flexible block protection and vector redirection
Security feature for Flash and RAM
Burst programming capability
Sector erase abort
RAM
Flash
Features
LDHX
TXS
Table 1-1
#RamLast+1
for exact array sizes)
MC9S08DV60 Series Data Sheet, Rev 3
;point one past RAM
;SP<-(H:X-1)
RAM
).
Section 4.5.9,
“Security”, for a detailed description
Freescale Semiconductor
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