AD8655ARZ Analog Devices Inc, AD8655ARZ Datasheet - Page 5

IC OPAMP GP R-R CMOS 28MHZ 8SOIC

AD8655ARZ

Manufacturer Part Number
AD8655ARZ
Description
IC OPAMP GP R-R CMOS 28MHZ 8SOIC
Manufacturer
Analog Devices Inc
Series
DigiTrim®r
Datasheets

Specifications of AD8655ARZ

Slew Rate
11 V/µs
Design Resources
Single Supply Low Noise LED Current Source Driver Using a Current Output DAC in the Reverse Mode (CN0139)
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Gain Bandwidth Product
28MHz
Current - Input Bias
1pA
Voltage - Input Offset
50µV
Current - Supply
3.7mA
Current - Output / Channel
220mA
Voltage - Supply, Single/dual (±)
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Op Amp Type
Precision
No. Of Amplifiers
1
Bandwidth
28MHz
Supply Voltage Range
2.7V To 5.5V
Amplifier Case Style
SOIC
No. Of Pins
8
Common Mode Rejection Ratio
120
Current, Input Bias
3.3 μA
Current, Input Offset
25 nA
Current, Output
50 mA
Current, Supply
7.5 mA
Harmonic Distortion
-78 dB
Impedance, Thermal
155 °C/W
Number Of Amplifiers
Dual
Package Type
SOIC-8
Resistance, Input
300 Kilohms
Temperature, Operating, Range
-40 to +85 °C
Voltage, Input
-13.4 to +14.3 V (Common-Mode)
Voltage, Noise
15 nV/sqrt Hz
Voltage, Offset
0.5 mV
Voltage, Output, High
+13.7 V
Voltage, Output, Low
-13.7 V
Voltage, Supply
±15 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage
Input Voltage
Differential Input Voltage
Output Short-Circuit Duration
Electrostatic Discharge (HBM)
Storage Temperature Range
Junction Temperature Range
Lead Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
to GND
R, RM Packages
R, RM Packages
(Soldering, 10 sec)
Rating
6 V
VSS − 0.3 V to VDD + 0.3 V
±6 V
Indefinite
3.0 kV
−65°C to +150°C
−65°C to +150°C
260°C
Rev. A | Page 5 of 20
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 4.
Package Type
8-Lead MSOP (RM)
8-Lead SOIC (R)
1
θ
soldered in the circuit board for surface-mount packages.
JA
is specified for worst-case conditions; that is, θ
AD8655/AD8656
θ
210
158
JA
1
JA
is specified for a device
θ
45
43
JC
Unit
°C/W
°C/W

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