LF353MX/NOPB National Semiconductor, LF353MX/NOPB Datasheet
LF353MX/NOPB
Specifications of LF353MX/NOPB
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LF353MX/NOPB Summary of contents
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... The devices also exhibit low noise and offset voltage drift. Typical Connection Simplified Schematic 1/2 Dual BI-FET II ™ trademark of National Semiconductor Corporation. © 2003 National Semiconductor Corporation Features n Internally trimmed offset voltage: n Low input bias current: n Low input noise voltage: n Low input noise current: ...
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... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage Power Dissipation Operating Temperature Range T (MAX) j Differential Input Voltage Input Voltage Range (Note 3) Output Short Circuit Duration Storage Temperature Range Lead Temp ...
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AC Electrical Characteristics (Note 5) Symbol Parameter THD Total Harmonic Distortion Note 2: For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115˚C/W typ junction to ambient for the N package, and 158˚C/W ...
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Physical Dimensions inches (millimeters) unless otherwise noted Order Number LF353M or LF353MX NS Package Number M08A Molded Dual-In-Line Package Order Number LF353N NS Package N08E 13 ...