MCP616T-I/SN Microchip Technology, MCP616T-I/SN Datasheet - Page 12
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MCP616T-I/SN
Manufacturer Part Number
MCP616T-I/SN
Description
IC OPAMP 2.3V R-R 8SOIC
Manufacturer
Microchip Technology
Datasheet
1.MCP616-IMS.pdf
(38 pages)
Specifications of MCP616T-I/SN
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Slew Rate
0.08 V/µs
Gain Bandwidth Product
190kHz
Current - Input Bias
15nA
Voltage - Input Offset
150µV
Current - Supply
19µA
Current - Output / Channel
17mA
Voltage - Supply, Single/dual (±)
2.3 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Channels
1
Voltage Gain Db
120 dB
Common Mode Rejection Ratio (min)
80 dB
Input Offset Voltage
0.15 mV
Operating Supply Voltage
3 V, 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP616T-I/SN
Manufacturer:
MICROCHIP
Quantity:
7 847
Part Number:
MCP616T-I/SN
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP616/7/8/9
Note: Unless otherwise indicated, V
R
FIGURE 2-31:
Pulse Response.
FIGURE 2-32:
Amplifier Output Response Time (MCP618 only).
FIGURE 2-33:
No Phase Reversal.
DS21613C-page 12
L
= 100 kΩ to V
-1
5
4
3
2
1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
V
Gain = +1 V/V
R
DD
L
Output
High-Z
= 1 k to V
= 5.0V
DD
/2 and C
Time (5 μs/div)
SS
Large-Signal, Non-Inverting
Chip Select (CS) to
The MCP616/7/8/9 Show
Time (100 µs/div)
Time (50 µs/div)
Output
On
V
L
OUT
= 60 pF.
V
IN
DD
CS
V
OUT
Output
High-Z
Gain = +2 V/V
V
= +2.3V to +5.5V, V
DD
Gain = +1
V
= 5.0V
DD
= 5.0V
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
SS
= GND, T
FIGURE 2-34:
Pulse Response.
FIGURE 2-35:
Hysteresis (MCP618 only).
FIGURE 2-36:
Input Voltage (below V
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
100µ
100n
100p
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10m
10n
10p
10µ
1m
1µ
1n
1p
A
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
= 25°C, V
Output
On
CS swept
High-to-Low
CM
Chip Select Voltage (V)
Gain = -1
V
Large-Signal, Inverting
Chip Select (CS) Internal
Measured Input Current vs.
= V
DD
Input Voltage (V)
© 2008 Microchip Technology Inc.
Time (50 µs/div)
Hysteresis
+125°C
SS
= 5.0V
+85°C
+25°C
-40°C
DD
).
/2, V
CS swept
Low-to-High
OUT
≈ V
DD
V
DD
Output
High-Z
/2,
= 5.0V