MCP616T-I/SN Microchip Technology, MCP616T-I/SN Datasheet - Page 4
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MCP616T-I/SN
Manufacturer Part Number
MCP616T-I/SN
Description
IC OPAMP 2.3V R-R 8SOIC
Manufacturer
Microchip Technology
Datasheet
1.MCP616-IMS.pdf
(38 pages)
Specifications of MCP616T-I/SN
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Slew Rate
0.08 V/µs
Gain Bandwidth Product
190kHz
Current - Input Bias
15nA
Voltage - Input Offset
150µV
Current - Supply
19µA
Current - Output / Channel
17mA
Voltage - Supply, Single/dual (±)
2.3 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Channels
1
Voltage Gain Db
120 dB
Common Mode Rejection Ratio (min)
80 dB
Input Offset Voltage
0.15 mV
Operating Supply Voltage
3 V, 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP616T-I/SN
Manufacturer:
MICROCHIP
Quantity:
7 847
Part Number:
MCP616T-I/SN
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP616/7/8/9
AC ELECTRICAL CHARACTERISTICS
MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
FIGURE 1-1:
Pin on the MCP618.
DS21613C-page 4
Electrical Specifications: Unless otherwise indicated, V
R
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Specifications: Unless otherwise indicated, V
R
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
CS Hysteresis
V
L
L
OUT
= 100 kΩ to V
= 100 kΩ to V
CS
I
I
CS
SS
High-Z
(typical)
(typical)
-50 nA
10 nA
Parameters
Parameters
t
DD
DD
ON
/2 and C
/2 and C
V
IL
Timing Diagram for the CS
L
L
= 60 pF.
= 60 pF.
(typical)
-19 µA
V
IH
t
OFF
I
O(LEAK)
V
Sym
GBWP
I
t
I
Sym
V
t
HYST
V
CSL
CSH
I
OFF
(typical)
(typical)
ON
PM
SS
SR
E
-50 nA
e
10 nA
i
IH
IL
High-Z
ni
ni
ni
0.8 V
DD
DD
Min
–1.0
V
—
—
—
—
—
-2
= +2.3V to +5.5V, V
= +2.3V to +5.5V, V
SS
Min
—
—
—
—
—
—
DD
-0.05
Typ
0.01
0.01
0.1
0.6
10
—
—
9
Typ
0.08
190
2.2
57
32
70
0.2 V
Max
V
100
—
—
—
—
—
DD
2
Max
DD
SS
SS
—
—
—
—
—
—
= GND, T
= GND, T
Units
µA
µA
µA
nA
µs
µs
V
V
V
nV/√Hz
fA/√Hz
Units
µV
V/µs
kHz
A
A
CS = V
CS = V
CS = V
CS = V
CS = 0.2V
G = +1 V/V, R
CS = 0.8V
G = +1 V/V, R
V
°
P-P
= 25°C, V
DD
= 25°C, V
= 5.0V
© 2008 Microchip Technology Inc.
SS
DD
DD
DD
G = +1V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
DD
DD
CM
CM
Conditions
to V
to V
L
L
= V
= V
= 1 kΩ to V
= 1 kΩ to V
Conditions
OUT
OUT
DD
DD
/2, V
/2, V
= 0.9V
= 0.1V
OUT
OUT
SS
SS
DD
DD
≈ V
≈ V
/2,
/2,
DD
DD
/2,
/2,