LPC660AIMX/NOPB National Semiconductor, LPC660AIMX/NOPB Datasheet - Page 4
![IC OP AMP QUAD LOPWR CMOS 14SOIC](/photos/5/65/56572/pkg_m14a_sml.jpg)
LPC660AIMX/NOPB
Manufacturer Part Number
LPC660AIMX/NOPB
Description
IC OP AMP QUAD LOPWR CMOS 14SOIC
Manufacturer
National Semiconductor
Datasheet
1.LPC660AIMNOPB.pdf
(17 pages)
Specifications of LPC660AIMX/NOPB
Amplifier Type
General Purpose
Number Of Circuits
4
Output Type
Rail-to-Rail
Slew Rate
0.11 V/µs
Gain Bandwidth Product
350kHz
Current - Input Bias
0.002pA
Voltage - Input Offset
1000µV
Current - Supply
160µA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
4.75 V ~ 15.5 V, ±2.38 V ~ 7.75 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Other names
*LPC660AIMX
*LPC660AIMX/NOPB
LPC660AIMX
*LPC660AIMX/NOPB
LPC660AIMX
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LPC660AIMX/NOPB
Manufacturer:
VT
Quantity:
6 221
www.national.com
Slew Rate
Gain-Bandwidth Product
Phase Margin
Gain Margin
Amp-to-Amp Isolation
Input Referred Voltage Noise
Input Referred Current Noise
Total Harmonic Distortion
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
= 0V, V
Note 1: Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of
Note 2: The maximum power dissipation is a function of T
(T
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4: Limits are guaranteed by testing or correlation.
Note 5: V
Note 6: V
Note 7: Input referred. V
Note 8: A military RETS electrical test specification is available on request. At the time of printing, the LPC660AMJ/883 RETS specification complied fully with the
boldface limits in this column. The LPC660AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 9: For operating at elevated temperatures, the device must be derated based on the thermal resistance θ
Note 10: All numbers apply for packages soldered directly into a PC board.
Note 11: Do not connect output to V
J(max)
–T
CM
A
+
+
Parameter
)θ
= 15V, V
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
JA
= 1.5V, V
.
CM
= 7.5V and R
+
O
= 15V and R
= 2.5, and R
+
L
when V
connected to 7.5V. For Sourcing tests, 7.5V ≤ V
(Note 6)
(Note 7)
F = 1 kHz
F = 1 kHz
F = 1 kHz, A
R
L
= 100 kΩ connected to V
L
= 100 kΩ, V
L
+
>
is greater than 13V or reliability may be adversely affected.
1M unless otherwise specified.
Conditions
V
= −10
O
J(max)
= 8 V
, θ
+
/2. Each amp excited in turn with 1 kHz to produce V
J
JA
PP
= 25˚C. Boldface limits apply at the temperature extremes. V
and T
A
. The maximum allowable power dissipation at any ambient temperature is P
4
0.0002
0.11
0.35
0.01
Typ
130
50
17
42
O
≤ 11.5V. For Sinking tests, 2.5V ≤ V
LPC660AMJ/883
(Notes 4, 8)
LPC660AM
Limit
0.07
0.04
±
30 mA over long term may adversely affect reliability.
JA
with P
D
LPC660AI
O
(Note 4)
= (T
= 13 V
Limit
0.07
0.05
O
J
≤ 7.5V.
–T
PP
A
)/θ
.
JA
.
LPC660I
(Note 4)
Limit
0.05
0.03
+
= 5V, V
Units
V/µs
MHz
Deg
min
dB
dB
%
D
=
−