AD826AN Analog Devices Inc, AD826AN Datasheet - Page 3

• Manufacturer Part Number: AD826AN
• Description: IC OPAMP VF 50MHZ DUAL LP 8DIP
• Manufacturer: Analog Devices Inc

Specifications of AD826AN

• Rohs Status: RoHS non-compliant
• Amplifier Type: Voltage Feedback
• Number Of Circuits: 2
• Slew Rate: 350 V/µs
• Gain Bandwidth Product: 50MHz
• -3db Bandwidth: 50MHz
• Current - Input Bias: 3.3µA
• Voltage - Input Offset: 500µV
• Current - Supply: 6.6mA
• Current - Output / Channel: 50mA
• Voltage - Supply, Single/dual (±): 5 V ~ 36 V, ±2.5 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Application: Unity Gain ADC⁄DAC Buffer, Cable Drivers, 8- and 10-Bit Data Acquisition Systems, Video Line Driver
• Bandwidth: 50 MHz
• Common Mode Rejection Ratio: 120
• Current, Input Bias: 3.3 μA
• Current, Input Offset: 25 nA
• Current, Output: 50 mA
• Current, Supply: 7.5 mA
• Harmonic Distortion: -78 dB
• Impedance, Thermal: 100 °C/W
• Input Capacitance: 1.5 pF (Typ.)
• Input Resistance: 300 Kiloohms (Typ.)
• Number Of Amplifiers: Dual
• Package Type: Mini-PDIP-8
• Resistance, Input: 300 Kilohms
• Temperature, Operating, Maximum: 85 °C
• Temperature, Operating, Minimum: -40 °C
• Temperature, Operating, Range: -40 to +85 °C
• Unity Gain Bandwidth: 35 MHz (Typ.)
• Voltage, Input: -13.4 to +14.3 V (Common-Mode)
• Voltage, Noise: 15 nV/sqrt Hz
• Voltage, Offset: 0.5 mV
• Voltage, Offset, Input: 0.5 mV (Typ.)
• Voltage, Output Swing: ±3.8 V (Typ.)
• Voltage, Output, High: +13.7 V
• Voltage, Output, Low: -13.7 V
• Voltage, Supply: ±15 V
• High Speed: 50 MHz unity gain bandwidth 350 V⁄μs slew rate 70 ns settling time to 0.01%
• Low Power: 7.5 mA max power supply current per amp
• Output Type: -

REV. C
Parameter
OUTPUT CHARACTERISTICS
MATCHING CHARACTERISTICS
POWER SUPPLY
NOTES
1
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Internal Power Dissipation
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . ± V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 6 V
Output Short Circuit Duration . . . . . . . See Derating Curves
Storage Temperature Range (N, R) . . . . . . . –65°C to +125°C
Operating Temperature Range . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 seconds) . . . +300°C
NOTES
1
2
Full power bandwidth = slew rate/2 π V
Stresses above those listed under Absolute Maximum Ratings may cause perma-
Specification is for device in free air: 8-lead plastic package, θ
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability .
8-lead SOIC package, θ
Output Voltage Swing
Output Current
Short-Circuit Current
Output Resistance
Dynamic
DC
Operating Range
Quiescent Current/Amplifier
Power Supply Rejection Ratio
Plastic (N) . . . . . . . . . . . . . . . . . . . . . See Derating Curves
Small Outline (R) . . . . . . . . . . . . . . . . See Derating Curves
Crosstalk
Gain Flatness Match
Slew Rate Match
Input Offset Voltage Match
Input Bias Current Match
Open-Loop Gain Match
Common-Mode Rejection Ratio Match V
Power Supply Rejection Ratio Match
JA
= 155°C/watt.
2
PEAK
.
1
Conditions
R
R
R
R
R
Open Loop
f = 5 MHz
G = +1, f = 40 MHz
G = –1
T
T
V
T
± 5 V to ± 15 V, T
Dual Supply
Single Supply
T
T
V
LOAD
LOAD
LOAD
LOAD
LOAD
O
CM
S
MIN
MIN
MIN
MIN
MIN
= ± 5 V to ± 15 V, T
= ± 10 V, R
JA
= ± 12 V, T
–T
–T
–T
to T
to T
= 100°C/watt;
= 500 Ω
= 150 Ω
= 1 kΩ
= 500 Ω
= 500 Ω
MAX
MAX
MAX
MAX
MAX
LOAD
S
MIN
MIN
–T
= 1 kΩ,
–T
ESD SUSCEPTIBILITY
ESD (electrostatic discharge) sensitive device. Electrostatic charges
as high as 4000 volts, which readily accumulate on the human
body and on test equipment, can discharge without detection.
Although the AD826 features proprietary ESD protection cir-
cuitry, permanent damage may still occur on these devices
if they are subjected to high energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid
any performance degradation or loss of functionality.
MAX
MIN
MAX
to T
2.0
1.5
1.0
0.5
MAX
0
–50
–40
V
± 5 V
± 5 V
± 15 V
± 15 V
0, +5 V
± 15 V
± 5 V
0, +5 V
± 15 V
± 15 V
± 15 V
± 15 V
± 5 V to ± 15 V
± 5 V to ± 15 V
± 15 V
± 15 V
± 5 V
± 5 V
± 15 V
± 15 V
–30
S
–20
8-LEAD MINI-DIP PACKAGE
AMBIENT TEMPERATURE – C
–10
0
10
8-LEAD SOIC PACKAGE
20
Min
3.3
3.2
13.3
12.8
+1.5,
+3.5
50
50
30
0.15
80
80
± 2.5
+5
75
30
40
Typ
3.8
3.6
13.7
13.4
90
8
–80
0.2
10
0.5
0.06
0.01
100
100
6.6
6.8
86
50
T
60
J
= +150 C
70
Max
2
0.8
± 18
+36
7.5
7.5
7.5
7.5
80
AD826
90
Unit
± V
± V
± V
± V
V
mA
mA
mA
mA
Ω
dB
dB
V/µs
mV
µA
mV/V
dB
dB
V
V
mA
mA
mA
mA
dB