MC33179DR2G ON Semiconductor, MC33179DR2G Datasheet - Page 5

• Manufacturer Part Number: MC33179DR2G
• Description: IC OPAMP QUAD LP LO NOISE 14SOIC
• Manufacturer: ON Semiconductor

Specifications of MC33179DR2G

• Amplifier Type: General Purpose
• Number Of Circuits: 4
• Slew Rate: 2 V/µs
• Gain Bandwidth Product: 5MHz
• Current - Input Bias: 100nA
• Voltage - Input Offset: 1500µV
• Current - Supply: 1.7mA
• Current - Output / Channel: 100mA
• Voltage - Supply, Single/dual (±): 4 V ~ 36 V, ±2 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Number Of Channels: 4
• Common Mode Rejection Ratio (min): 80 dB
• Input Voltage Range (max): Positive Rail - 2 V
• Input Voltage Range (min): Negative Rail + 2 V
• Input Offset Voltage: 3 mV
• Input Bias Current (max): 500 nA
• Operating Supply Voltage: 36 V
• Supply Current: 1.7 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Dual Supply Voltage: +/- 3 V, +/- 5 V, +/- 9 V
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Dual Supply Voltage: +/- 2 V
• Mounting Style: SMD/SMT
• Shutdown: No
• Technology: Bipolar
• Voltage Gain Db: 106.02 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MC33179DR2GOS; MC33179DR2GOS; MC33179DR2GOSTR

AC ELECTRICAL CHARACTERISTICS
Slew Rate
Gain Bandwidth Product (f = 100 kHz)
AC Voltage Gain (R
Unity Gain Bandwidth (Open−Loop) (R
Gain Margin (R
Phase Margin (R
Channel Separation (f = 100 Hz to 20 kHz)
Power Bandwidth (V
Total Harmonic Distortion (R
Open Loop Output Impedance
Differential Input Resistance (V
Differential Input Capacitance (V
Equivalent Input Noise Voltage (R
Equivalent Input Noise Current
2400
2000
1600
1200
(V
(f = 1.0 kHz)
(f = 10 kHz)
(f = 20 kHz)
(V
f = 10 Hz
f = 1.0 kHz
f = 10 Hz
f = 1.0 kHz
800
400
in
O
0
−60 −40 −20
= −10 V to +10 V, R
= 0 V, f = 3.0 MHz, A
MC33178D
MC33178P/9P
MC33179D
Figure 2. Maximum Power Dissipation
L
= 600 W, C
L
= 600 W, C
L
O
T
= 600 W, V
0
A
= 20 V
, AMBIENT TEMPERATURE (°C)
versus Temperature
Characteristics
20
L
V
= 2.0 kW, C
L
L
pp,
= 10 V)
= 0 pF)
L
= 600 W,, V
40
= 0 pF)
CM
O
R
CM
S
L
= 0 V, f = 20 kHz)
= 0 V)
60
= 600 W, THD ≤ 1.0%)
= 100 W,)
= 0 V)
L
L
80 100 120
= 600 W, C
= 100 pF, A
O
= 2.0 V
(V
CC
= +15 V, V
pp
L
V
= 0 pF)
, A
140
= +1.0 V)
V
http://onsemi.com
= +1.0 V)
160
EE
180
= −15 V, T
5
21, 23, 24
22, 23, 24
−1.0
−2.0
−3.0
−4.0
Figure
17, 32
19, 20
4.0
3.0
2.0
1.0
A
18
25
26
27
28
29
0
−55
= 25°C, unless otherwise noted.)
Figure 3. Input Offset Voltage versus
−25
Symbol
Temperature for 3 Typical Units
GBW
BW
THD
A
|Z
BW
SR
A
f
CS
R
C
e
i
VO
n
m
m
O
in
in
n
T
p
|
A
, AMBIENT TEMPERATURE (°C)
0
Unit 1
Unit 2
Unit 3
Min
1.2
2.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
25
0.0024
0.014
0.024
−120
0.33
0.15
Typ
150
200
2.0
5.0
3.0
8.0
7.5
50
50
15
60
32
10
75
Max
V
V
R
V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
CC
EE
CM
S
= 10 W
= +15 V
= −15 V
= 0 V
100
pA/ Hz
nV/ Hz
V/ms
MHz
MHz
Unit
Deg
kHz
dB
dB
dB
kW
pF
%
W
√
√
125