TISP61089BDR Bourns Inc., TISP61089BDR Datasheet - Page 9

• Manufacturer Part Number: TISP61089BDR
• Description: SURGE SUPP SLIC PROG HV 8-SOP
• Manufacturer: Bourns Inc.

Specifications of TISP61089BDR

• Package / Case: 8-SOIC (3.9mm Width)
• Voltage - Breakover: *
• Voltage - Off State: 170V
• Current - Peak Pulse (10 X 1000µs): 30A
• Current - Hold (ih): 150mA
• Number Of Elements: 2
• Capacitance: 100pF
• Applications: SLIC
• Number Of Circuits: 2
• Voltage - Working: -100V
• Voltage - Clamping: -112V
• Technology: Mixed Technology
• Breakover Current Ibo Max: 6.5 A
• Rated Repetitive Off-state Voltage Vdrm: 170 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Holding Current (ih Max): 150 mA
• Mounting Style: SMD/SMT
• Power (watts): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

protection voltage, the length of the capacitor to gate terminal tracking should be minimized. Inductive voltages in the protector cathode wiring
will also increase the protection voltage. These voltages can be minimized by routing the SLIC connection through the protector as shown in
Figure 6.
Figure 9, which has a 10 A/µs rate of impulse current rise, shows a positive gate charge (Q
decoupling capacitor used, the increase in gate supply is about 1 V (= Q
But, the voltage increase does not directly add to the protection voltage as the supply voltage change reaches a maximum at 0.4 µs, when the
gate current reverses polarity, and the protection voltage peaks earlier at 0.3 µs. In Figure 9, the peak clamping voltage (V
increase of 5.5 V on the nominal gate supply voltage. This 5.5 V increase is the sum of the supply rail increase at that time, (0.5 V), and the
protection circuit’s cathode diode to supply rail breakover voltage (5 V). In practice, use of the recommended 220 nF gate decoupling capacitor
would give a supply rail increase of about 0.3 V and a V
Voltage Stress Levels on the TISP61089B
Figure 10 shows the protector electrodes. The package terminal designated gate, G, is the transistor base, B, electrode connection and so is
marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK (off state) and the antiparallel diode
(reverse blocking). This clause covers the necessary testing to ensure the junctions are good.
Testing transistor CB and EB: The maximum voltage stress level for the TISP61089B is V
diode voltage overshoot, V
the common (0 V) for this test (see Figure 10). The measured current, I
Gated Protectors (Continued)
TISP61089B High Voltage Ringing SLIC Protector
FRM
Figure 9. Protector Fast Impulse Clamping and Switching Waveforms
. The current flowing out of the G terminal is measured at V
-20
-40
-60
-80
-1
-2
-3
-4
-5
0
1
0
0.0
0.0
Q GS
(BO)
value of about -77.3 V.
V K
0.5
0.5
Time - µs
Time - µs
GKS
GS
I G
, is the sum of the junction currents I
/C1). This change is just visible on the -72 V gate voltage, V
Customers should verify actual device performance in their specific applications.
1.0
1.0
BATH
BATH
GS
V BATH
) of about 0.1 µC. With the 0.1 µF gate
I K
with the addition of the short term antiparallel
plus V
AI6XDE
1.5
FRM
1.5
Specifications are subject to change without notice.
. The SCR K terminal is shorted to
CB
and I
OCTOBER 2000 - REVISED JULY 2008
EB
(BO)
.
) is -77.5 V, an
BATH
.