NUP2301MW6T1 ON Semiconductor, NUP2301MW6T1 Datasheet

NUP2301MW6T1

Manufacturer Part Number

NUP2301MW6T1

Description

IC TVS DIODE ARRAY 2LINE SC88

Manufacturer

ON Semiconductor

Datasheet

1.NUP2301MW6T1G.pdf (4 pages)

Specifications of NUP2301MW6T1

Voltage - Reverse Standoff (typ)

70V

Voltage - Breakdown

70V

Polarization

2 Channel Array - Unidirectional

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Applications

General Purpose

Number Of Circuits

Voltage - Working

70V

Technology

Diode Array

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Power (watts)

Voltage - Clamping

Other names

NUP2301MW6T1OS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NUP2301MW6T1

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NUP2301MW6T1

Quantity:

908

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NUP2301MW6T1G

Manufacturer:

Quantity:

12 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NUP2301MW6T1G

Manufacturer:

Quantity:

1 150

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NUP2301MW6T1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NUP2301MW6T1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 4
Download datasheet (90Kb)

NUP2301MW6T1

Low Capacitance Diode

Array for ESD Protection in

Two Data Lines

provide protection for sensitive components from possible harmful

electrical transients; for example, ESD (electrostatic discharge).

Features

•

Applications

•

MAXIMUM RATINGS

 Semiconductor Components Industries, LLC, 2005

January, 2005 − Rev. 2

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. FR−5 = 1.0 0.75 0.062 in.

Forward Current

Peak Forward Surge Current

Repetitive Peak Reverse Voltage

Average Rectified Forward

Current (Note 1)

(Averaged over any 20 ms Period)

Repetitive Peak Forward Current

Non−Repetitive Peak Forward Current

t = 1.0 ms

t = 1.0 S

Reverse Voltage

NUP2301MW6T1 is a MicroIntegration device designed to

Low Capacitance (2.0 pf Maximum Between I/O Lines)

Single Package Integration Design

Provides ESD Protection for JEDEC Standards JESD22

Protection for IEC61000−4−2 (Level 4)

Ensures Data Line Speed and Integrity

Fewer Components and Less Board Space

Direct the Transient to Either Positive Side or to the Ground

Pb−Free Package is Available

T1/E1 Secondary IC Protection

T3/E3 Secondary IC Protection

HDSL, IDSL Secondary IC Protection

Video Line Protection

Microcontroller Input Protection

Base Stations

C Bus Protection

Machine Model = Class C

Human Body Model = Class 3B

8.0 kV (Contact)

15 kV (Air)

Rating

(Each Diode) (T

= 25°C unless otherwise noted)

Symbol

FM(surge)

F(AV)

FRM

FSM

RRM

Value

200

500

715

450

2.0

1.0

0.5

mAdc

Unit

Vdc

†For information on tape and reel specifications,

NUP2301MW6T1

NUP2301MW6T1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CASE 419B

STYLE 23

SC−88

Device

I/O

ORDERING INFORMATION

PIN CONFIGURATION

http://onsemi.com

AND SCHEMATIC

68 = Specific Device Code

(Pb−Free)

Package

MARKING DIAGRAM

SC−88

= Date Code

Publication Order Number:

NUP2301MW6T1/D

3000/Tape & Reel

Shipping

N/C

I/O

N/C

†

Related parts for NUP2301MW6T1

NUP2301MW6T1 Summary of contents

Page 1

... NUP2301MW6T1 Low Capacitance Diode Array for ESD Protection in Two Data Lines NUP2301MW6T1 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features • Low Capacitance (2.0 pf Maximum Between I/O Lines) • ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient Lead Solder Temperature Maximum 10 Seconds Duration Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 mA) (BR) Reverse Voltage Leakage Current Capacitance (between I/O pins) Capacitance (between ...

Page 3

... 0.0197 0.40 0.0157 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE 02U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 4

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NUP2301MW6T1/D ...

Related keywords

nup2301mw6t1
nup2301
nup230
nup2301mw6t1g
NUP2301MW6T1 datasheet
NUP2301MW6T1 data sheet
NUP2301MW6T1 pdf datasheet
NUP2301MW6T1 component
NUP2301MW6T1 part
NUP2301MW6T1 distributor
NUP2301MW6T1 RoHS
NUP2301MW6T1 datasheet download