nup2301 ON Semiconductor, nup2301 Datasheet

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nup2301

Manufacturer Part Number
nup2301
Description
Low Capacitance Diode Array For Esd Protection In Two Data Lines
Manufacturer
ON Semiconductor
Datasheet

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NUP2301MW6T1
Low Capacitance Diode
Array for ESD Protection in
Two Data Lines
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
Applications
MAXIMUM RATINGS
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward
Current (Note 1)
(Averaged over any 20 ms Period)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
Reverse Voltage
NUP2301MW6T1 is a MicroIntegration device designed to
Low Capacitance (2.0 pf Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Protection for IEC61000−4−2 (Level 4)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Pb−Free Package is Available
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
C Bus Protection
Machine Model = Class C
Human Body Model = Class 3B
8.0 kV (Contact)
15 kV (Air)
Rating
(Each Diode) (T
J
= 25°C unless otherwise noted)
I
Symbol
FM(surge)
V
I
I
I
F(AV)
FRM
FSM
V
RRM
I
F
R
Value
200
500
715
450
2.0
1.0
0.5
70
70
1
mAdc
mAdc
Unit
Vdc
mA
mA
V
A
†For information on tape and reel specifications,
NUP2301MW6T1
NUP2301MW6T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CASE 419B
STYLE 23
6
SC−88
5
Device
4
I/O
V
V
1
ORDERING INFORMATION
N
P
2
PIN CONFIGURATION
3
http://onsemi.com
AND SCHEMATIC
3
1
2
68 = Specific Device Code
d
(Pb−Free)
Package
MARKING DIAGRAM
SC−88
SC−88
= Date Code
Publication Order Number:
NUP2301MW6T1/D
3000/Tape & Reel
3000/Tape & Reel
68
6
5
5
4
d
Shipping
N/C
I/O
N/C

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nup2301 Summary of contents

Page 1

... NUP2301MW6T1 Low Capacitance Diode Array for ESD Protection in Two Data Lines NUP2301MW6T1 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features • Low Capacitance (2.0 pf Maximum Between I/O Lines) • Single Package Integration Design • ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient Lead Solder Temperature Maximum 10 Seconds Duration Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 mA) (BR) Reverse Voltage Leakage Current Capacitance (between I/O pins) Capacitance (between ...

Page 3

... 0.0197 0.40 0.0157 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE 02U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

Page 4

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NUP2301MW6T1/D ...

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