nup2301 ON Semiconductor, nup2301 Datasheet - Page 2

• Manufacturer Part Number: nup2301
• Description: Low Capacitance Diode Array For Esd Protection In Two Data Lines
• Manufacturer: ON Semiconductor

2. FR−5 = 1.0  0.75  0.062 in.
3. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Thermal Resistance Junction−to−Ambient
Lead Solder Temperature
Junction Temperature
Storage Temperature
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current
Capacitance (between I/O pins)
Capacitance (between I/O pin and ground)
Forward Voltage
100
1.0
0.1
10
0.2
0.4
Figure 1. Forward Voltage
V
T
F
, FORWARD VOLTAGE (V)
A
= 85°C
Characteristic
Characteristic
0.6
(BR)
Maximum 10 Seconds Duration
= 100 mA)
T
1.75
0.75
1.25
A
1.5
1.0
0.8
= 25°C
(T
0
J
(V
(V
= 25°C unless otherwise noted) (Each Diode)
T
R
R
A
(V
(V
= −40°C
= 25 Vdc, T
= 70 Vdc, T
R
R
1.0
= 0 V, f = 1.0 MHz)
= 0 V, f = 1.0 MHz)
(I
(I
(I
(I
F
F
(V
2
http://onsemi.com
V
F
F
= 150 mAdc)
= 1.0 mAdc)
R
R
Figure 3. Capacitance
= 10 mAdc)
= 50 mAdc)
, REVERSE VOLTAGE (V)
J
J
= 70 Vdc)
= 150°C)
= 150°C)
1.2
2
0.001
4
0.01
Symbol
1.0
0.1
10
R
T
T
T
Symbol
0
qJA
stg
L
J
V
C
C
V
(BR)
I
R
D
D
F
6
10
Figure 2. Leakage Current
V
Min
70
−
−
−
−
−
−
−
−
−
R
, REVERSE VOLTAGE (V)
−55 to +150
−55 to +150
T
T
T
T
A
A
T
A
A
Max
20
625
260
A
= 150°C
= 125°C
= 55°C
= 25°C
8
= 85°C
Typ
1.0
1.6
−
−
−
−
−
−
−
−
30
1000
1250
Max
715
855
2.5
2.0
30
50
−
3
40
°C/W
Unit
°C
°C
°C
mAdc
mV
Unit
Vdc
pF
pF
dc
50