ALD1101PAL Advanced Linear Devices Inc, ALD1101PAL Datasheet

ALD1101PAL

Manufacturer Part Number

ALD1101PAL

Description

MOSFET 2N-CH 13.2V 40MA 8PDIP

Manufacturer

Advanced Linear Devices Inc

Datasheet

1.ALD1101PAL.pdf (4 pages)

Specifications of ALD1101PAL

Package / Case

8-DIP (0.300", 7.62mm)

Fet Type

2 N-Channel (Dual)

Fet Feature

Standard

Drain To Source Voltage (vdss)

13.2V

Vgs(th) (max) @ Id

1V @ 10µA

Power - Max

500mW

Mounting Type

Through Hole

Minimum Operating Temperature

0 C

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

75 Ohm @ 5 V

Forward Transconductance Gfs (max / Min)

0.01 S

Drain-source Breakdown Voltage

13.2 V

Gate-source Breakdown Voltage

13.2 V

Continuous Drain Current

40 mA

Power Dissipation

500 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1014-1002

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FEATURES

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos grades -- 2mV, 5mV, 10mV

• High input impedance -- 10

• Negative current (I

• Enhancement-mode (normally off)

• DC current gain 10

ORDERING INFORMATION

* Contact factory for industrial temperature range.

GENERAL DESCRIPTION

The ALD1101 is a monolithic dual N-channel matched transistor pair

intended for a broad range of analog applications. These enhancement-

mode transistors are manufactured with Advanced Linear Devices' en-

hanced ACMOS silicon gate CMOS process.

The ALD1101 offers high input impedance and negative current tempera-

ture coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for switching and

amplifying applications in +2V to +12V systems where low input bias

current, low input capacitance and fast switching speed are desired. Since

these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment. When

used with an ALD1102, a dual CMOS analog switch can be constructed.

In addition, the ALD1101 is intended as a building block for differential

amplifier input stages, transmission gates, and multiplexer applications.

The ALD1101 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 50pA at room temperature. For example, DC beta of the device

at a drain current of 5mA at 25 C is = 5mA/50pA = 100,000,000.

coefficient

-55 C to +125 C

8-Pin

CERDIP

Package

ALD1101 DA

INEAR

DVANCED

EVICES,

Operating Temperature Range*

) temperature

NC.

0 C to +70 C

8-Pin

Plastic Dip

Package

ALD1101A PA

ALD1101B PA

ALD1101 PA

DUAL N-CHANNEL MATCHED MOSFET PAIR

typical

0 C to +70 C

8-Pin

SOIC

Package

ALD1101 SA

PIN CONFIGURATION

BLOCK DIAGRAM

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Analog switches

• Choppers

• Differential amplifier

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

SOURCE

input stage

DRAIN

GATE

DRAIN 1 (3)

DRAIN 2 (5)

DA, PA, SA PACKAGE

ALD1101A/ALD1101B

TOP VIEW

GATE 1 (2)

GATE 2 (6)

SUBSTRATE (8)

SOURCE 2 (7)

SOURCE 1 (1)

ALD1101

SUBSTRATE

SOURCE

GATE

DRAIN

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ALD1101PAL Summary of contents

Page 1

A DVANCED L INEAR D I EVICES, NC. DUAL N-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications. These enhancement- mode transistors are manufactured with ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-source voltage Gate-source voltage Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS unless otherwise specified A Parameter Symbol Min Gate Threshold Voltage ...

Page 3

TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS 160 120 DRAIN-SOURCE VOLTAGE (V) FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE 5 1 x10 ...

Page 4

ALD1101A/ALD1101B ALD1101 Advanced Linear Devices 4 ...

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