ALD1101PAL Advanced Linear Devices Inc, ALD1101PAL Datasheet - Page 2

• Manufacturer Part Number: ALD1101PAL
• Description: MOSFET 2N-CH 13.2V 40MA 8PDIP
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1101PAL

• Package / Case: 8-DIP (0.300", 7.62mm)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1V @ 10µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 75 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.01 S
• Drain-source Breakdown Voltage: 13.2 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: 40 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1002

ALD1101A/ALD1101B
ALD1101
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
T
Transconductance G
A
Parameter
Gate Threshold
Voltage
Offset Voltage
V
Gate Threshold
Temperature Drift
On Drain Current
Mismatch
Output
Conductance
Drain Source
ON Resistance
Drain Source
ON Resistance
Mismatch
Drain Source
Breakdown
Voltage
Off Drain Current
Gate Leakage
Current
Input
Capacitance
GS1
= 25 C unless otherwise specified
- V
GS2
Symbol
V
V
TC
I
G
R
BV
I
I
C
DS (ON)
DS(OFF)
GSS
T
OS
G
DS(ON)
R
ISS
fs
OS
VT
DS(ON)
DSS
fs
GS
DS
Min
0.4
25
12
PA, SA package
DA package
5
ALD 1101A
Typ
-1.2
200
0.7
0.5
0.5
0.1
40
10
50
1
6
Max
1.0
75
50
10
10
2
4
4
Advanced Linear Devices
Min
0.4
25
12
ALD1101B
5
Typ
-1.2
200
0.7
0.5
0.5
0.1
40
10
50
1
6
Max
1.0
75
50
10
10
5
4
4
Min
0.4
25
12
5
ALD1101
-1.2
Typ
200
0.7
0.5
0.5
0.1
40
10
50
1
6
Max
1.0
10
75
50
10
10
4
4
Unit
V
mV
mV/ C
mA
mmho
%
%
V
nA
pA
nA
pF
mho
A
I
I
V
V
V
V
V
I
V
T
V
T
DS
DS
DS
A
A
GS
DS
DS
DS
DS
DS
DS
= 125 C
= 125 C
Conditions
= 10 A V
= 100 A V
= 10 A V
= V
= 5V I
= 5V I
= 0.1V V
= 0.1V V
=12V V
=0V V
DS
Test
-55 C to +125 C
-65 C to +150 C
DS
DS
= 5V
GS
GS
0 C to +70 C
GS
GS
= 10mA
GS
GS
= 10mA
GS
=12V
= 0V
=0V
= V
= 5V
= 5V
500 mW
= V
+260 C
DS
13.2V
13.2V
DS
2