ALD114935PAL Advanced Linear Devices Inc, ALD114935PAL Datasheet

ALD114935PAL

Manufacturer Part Number

ALD114935PAL

Description

MOSFET N-CH 10.6V DUAL 8PDIP

Manufacturer

Advanced Linear Devices Inc

Series

EPAD®r

Datasheet

1.ALD114935PAL.pdf (11 pages)

Specifications of ALD114935PAL

Package / Case

8-DIP (0.300", 7.62mm)

Fet Type

2 N-Channel (Dual)

Fet Feature

Depletion Mode

Drain To Source Voltage (vdss)

10.6V

Vgs(th) (max) @ Id

3.45V @ 1µA

Power - Max

500mW

Mounting Type

Through Hole

Minimum Operating Temperature

0 C

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

540 Ohm (Typ) @ 0 V

Forward Transconductance Gfs (max / Min)

0.0014 S

Drain-source Breakdown Voltage

10.6 V

Gate-source Breakdown Voltage

10.6 V

Continuous Drain Current

12 mA

Power Dissipation

500 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1014-1067

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GENERAL DESCRIPTION

ALD114835/ALD114935 are monolithic quad/dual depletion mode N-Channel

MOSFETs matched at the factory using ALD’s proven EPAD CMOS technol-

ogy. These devices are intended for low voltage, small signal applications. They

are excellent functional replacements for normally-closed relay applications,

as they are normally on (conducting) without any power applied, but could be

turned off or modulated when system power supply is turned on. These

MOSFETs have the unique characteristics of, when the gate is grounded, oper-

ating in the resistance mode for low drain voltage levels and in the current

source mode for higher voltage levels and providing a constant drain current.

ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-

trical characteristics matching. As these devices are on the same monolithic

chip, they also exhibit excellent temperature tracking characteristics. They are

versatile as design components for a broad range of analog applications such

as basic building blocks for current sources, differential amplifier input stages,

transmission gates, and multiplexer applications. Besides matched pair electri-

cal characteristics, each individual MOSFET also exhibits well controlled pa-

rameters, enabling the user to depend on tight design limits. Even units from

different batches and different date of manufacture have correspondingly well

matched characteristics.

These depletion mode devices are built for minimum offset voltage and differ-

ential thermal response, and they are designed for switching and amplifying

applications in single 5V to +/-5V systems where low input bias current, low

input capacitance and fast switching speed are desired. These devices exhibit

well controlled turn-off and sub-threshold charactersitics and therefore can be

used in designs that depend on sub-threshold characteristics.

The ALD114835/ALD114935 are suitable for use in precision applications which

require very high current gain, beta, such as current mirrors and current sources.

A sample calculation of the DC current gain at a drain current of 3mA and gate

input leakage current of 30pA = 100,000,000. It is recommended that the user,

for most applications, connect the V+ pin to the most positive voltage and the

V- and N/C pins to the most negative voltage in the system. All other pins must

have voltages within these voltage limits.

FEATURES

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -3.50V +/- 0.05V

• Nominal R

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

ORDERING INFORMATION

* Contact factory for industrial temp. range or user-specified threshold voltage values

ALD114835SCL ALD114835PCL ALD114935SAL ALD114935PAL

16-Pin

SOIC

Package

GS(th)

0°C to +70°C

match (V

DS(ON)

INEAR

DVANCED

EVICES,

@ V

16-Pin

Plastic Dip

Package

Operating Temperature Range*

) — 20mV

=0.0V of 540Ω

NC.

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

(“L” suffix for lead free version)

Ω typical

GS(th)

temperature coefficient

SOIC

Package

8-Pin

MATCHED PAIR MOSFET ARRAY

0°C to +70°C

Plastic Dip

Package

8-Pin

www.aldinc.com

APPLICATIONS

• Functional replacement of Form B (NC) relay

• Zero power fail safe circuits

• Backup battery circuits

• Power failure detector

• Fail safe signal detector

• Source followers and buffers

• Precision current mirrors

• Precision current sources

• Capacitives probes

• Sensor interfaces

• Charge detectors

• Charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors

• Sample and Hold

• Alarm systems

• Current multipliers

• Analog switches

• Analog multiplexers

• Voltage comparators

• Level shifters

PIN CONFIGURATIONS

N/C*

*N/C pins are internally connected,

V -

SAL, PAL PACKAGES

SCL, PCL PACKAGES

ALD114835/ALD114935

ALD114935

M 1

M 4

M 1

ALD114835

connect to V-

M 3

M 2

V GS(th) = -3.50V

V -

N/C*

EPAD

Related parts for ALD114935PAL

ALD114935PAL Summary of contents

Page 1

... SOIC Plastic Dip Package Package ALD114835SCL ALD114835PCL ALD114935SAL ALD114935PAL * Contact factory for industrial temp. range or user-specified threshold voltage values Rev 2.0 ©2010 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 MATCHED PAIR MOSFET ARRAY temperature coefficient 0° ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-Source voltage Gate-Source voltage Power dissipation Operating temperature range SCL, PCL, SAL, PAL package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS + GND T A ...

Page 3

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. ALD’s Electrically Programmable Analog Device (EPAD) ...

Page 4

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY (cont.) SUB-THRESHOLD REGION OF OPERATION Low voltage systems, namely those operating at 5V, 3.3V or less, typically require MOSFETs that have threshold voltage less. The threshold, or turn-on, voltage ...

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ALD114935PAL Advanced Linear Devices Inc, ALD114935PAL Datasheet

ALD114935PAL

Specifications of ALD114935PAL

Related parts for ALD114935PAL

ALD114935PAL Summary of contents

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