ALD114935PAL Advanced Linear Devices Inc, ALD114935PAL Datasheet - Page 10

• Manufacturer Part Number: ALD114935PAL
• Description: MOSFET N-CH 10.6V DUAL 8PDIP
• Manufacturer: Advanced Linear Devices Inc
• Series: EPAD®r

Specifications of ALD114935PAL

• Package / Case: 8-DIP (0.300", 7.62mm)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Depletion Mode
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 3.45V @ 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 540 Ohm (Typ) @ 0 V
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10.6 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1067

ALD114835/ALD114935
S (45°)
e
S (45°)
D
L
H
b
A
SOIC-8 PACKAGE DRAWING
A
E
1
C
8 Pin Plastic SOIC Package
ø
Advanced Linear Devices
Dim
D-8
A
ø
A
C
E
H
S
b
e
L
1
1.35
0.10
0.35
0.18
4.69
3.50
5.70
0.60
0.25
Min
0°
Millimeters
1.27 BSC
0.937
Max
1.75
0.25
0.45
0.25
5.00
4.05
6.30
0.50
8°
0.053
0.004
0.014
0.007
0.185
0.140
0.224
0.024
0.010
Min
0°
0.050 BSC
Inches
0.069
0.010
0.018
0.010
0.196
0.160
0.248
0.037
0.020
10 of 11
Max
8°